15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs

15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switc

15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs

15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switc

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.14Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs

15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs

15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switc

15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs

15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switc

POWER LOGIC LEVEL MOSFETS

[GE SOLID STATE] POWER LOGIC LEVEL MOSFETS

Power Logic Level MOSFETs

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Power Logic Level MOSFETs

文件：151.19 Kbytes Page：2 Pages

N-Channel 60 V(D-S) MOSFET

文件：1.08944 Mbytes Page：8 Pages

Trans MOSFET N-CH 50V 15A 3-Pin(3+Tab) TO-220AB

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.115 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ LOGIC LEVEL COMPATIBLE INPUT ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION AP