位置：首页 > IC中文资料第4575页 > SMCJ6040
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SMCJ6040 | 5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors DESCRIPTION: These Transient Voltage Suppressor devices are a series of Bi-directional Silicon Transient Suppressors used in AC applications where large voltage transients can permanently damage voltage-sensitive components. FEATURES: ● BIDIRECTIONAL ● 1500 WATTS PEAK POWER ● VOLTAGE RANGE FR | Microsemi 美高森美 |   | |
SMCJ6040 | Transient Voltage Suppressor 文件：328.41 Kbytes Page：4 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors DESCRIPTION: These Transient Voltage Suppressor devices are a series of Bi-directional Silicon Transient Suppressors used in AC applications where large voltage transients can permanently damage voltage-sensitive components. FEATURES: ● BIDIRECTIONAL ● 1500 WATTS PEAK POWER ● VOLTAGE RANGE FR | Microsemi 美高森美 | | ||
Transient Voltage Suppressor 文件：328.41 Kbytes Page：4 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
600W Bidirectional Transient Voltage Suppressor | DIGITRON | | ||
封装/外壳：DO-214AB，SMC 包装：卷带（TR） 描述：TVS DIODE 9VWM 15.6VC DO214AB 电路保护 TVS - 二极管 | Microsemi 美高森美 | | ||
封装/外壳：DO-214AB，SMC 包装：卷带（TR） 描述：TVS DIODE 9VWM 15.6VC DO214AB 电路保护 TVS - 二极管 | Microsemi 美高森美 | | ||
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 15.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | | ||
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | |
SMCJ6040产品属性
- 类型
描述
- 型号
SMCJ6040
- 制造商
Microsemi Corporation
- 功能描述
TVS SGL BI-DIR 8.5V 1.5KW 2PIN DO-214AB - Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microsemi |
DO-214AB |
88000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Microsemi |
19+ |
DO-214AB |
200000 |
SMCJ6040规格书下载地址
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DdatasheetPDF页码索引
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