32MByte, 64MByte, 128MByte, 256MByte, 512MByte, 1GByte, 2GByte, and 4GByte 3.3/5V Supply CompactFlash??Card

Summary description The CompactFlash is a small form factor non-volatile memory card which provides high capacity data storage. Its aim is to capture, retain and transport data, audio and images, facilitating the transfer of all types of digital information between a large variety of digital syst

32MByte, 64MByte, 128MByte, 256MByte, 512MByte, 1GByte, 2GByte, and 4GByte 3.3/5V Supply CompactFlash??Card

Summary description The CompactFlash is a small form factor non-volatile memory card which provides high capacity data storage. Its aim is to capture, retain and transport data, audio and images, facilitating the transfer of all types of digital information between a large variety of digital syst

32MByte, 64MByte, 128MByte, 256MByte, 512MByte, 1GByte, 2GByte, and 4GByte 3.3/5V Supply CompactFlash??Card

Summary description The CompactFlash is a small form factor non-volatile memory card which provides high capacity data storage. Its aim is to capture, retain and transport data, audio and images, facilitating the transfer of all types of digital information between a large variety of digital syst

32MByte, 64MByte, 128MByte, 256MByte, 512MByte, 1GByte, 2GByte, and 4GByte 3.3/5V Supply CompactFlash??Card

Summary description The CompactFlash is a small form factor non-volatile memory card which provides high capacity data storage. Its aim is to capture, retain and transport data, audio and images, facilitating the transfer of all types of digital information between a large variety of digital syst

32MByte, 64MByte, 128MByte, 256MByte, 512MByte, 1GByte, 2GByte, and 4GByte 3.3/5V Supply CompactFlash??Card

Summary description The CompactFlash is a small form factor non-volatile memory card which provides high capacity data storage. Its aim is to capture, retain and transport data, audio and images, facilitating the transfer of all types of digital information between a large variety of digital syst

描述：MEMORY CARD COMPACTFLASH 512MB 存储卡，模块 存储卡

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These feat

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators ■ RF REGULATOR ■ VERY LOW DROPOUT VOLTAGE : 30mV ■ ULTRA LOW OUTPUT VOLTAGE NOISE ■ HIGH PSRR : 70dB ■ LOW STAND-BY CURRENT : 20µA ■ LOW QUIESCENT CURRENT : 150µA FULL LOAD ■ NO CURRENT IN POWER DOWN

Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.

SUMMARY DESCRIPTION The LRI512 is a contactless memory, powered by an externally transmitted radio wave. It is fully compliant with the ISO15693 recommendation for radio-frequency power and signal interface. The LRI512 contains 512 bits of Electrically Erasable Programmable Memory (EEPROM

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo