Power Trench MOSFET

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

FEATURES  High-speed switching, Low On-resistance  1.2V Low gate drive  ESD protected  Available in SC89-3 package DESCRIPTION VDS=20V VGS=±8V ID(A)=0.83A RDS(ON)=200mΩ(Typ.)@VGS=4.5V RDS(ON)=245mΩ(Typ.)@VGS=2.5V RDS(ON)=310mΩ(Typ.)@VGS=1.8V RDS(ON)=380mΩ(Typ.)@VGS=1.5V RDS(ON)=

100V N-Channel MOSFET

General Description The AO4452 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applicatio

Pushbutton valve

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115dB 768kHz 32-bit 2ch Premium DAC

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115dB 768kHz 32-bit 2ch Premium DAC

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