Surface Mount TRANSZORB® Transient Voltage Suppressors

FEATURES • Available in bidirectional polarity only • 3000 W peak pulse power capability with a (10/1000 μs) waveform • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Not recommende

Surface Mount TRANSZORB® Transient Voltage Suppressors

分立 ·Available in bi-directional polarity only\n·3000 W peak pulse power capability with a (10/1000 µs) waveform\n·Excellent clamping capability;

Surface Mount TRANSZORB® Transient Voltage Suppressors

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Surface Mount TRANSZORB® Transient Voltage Suppressors

Bidirectional\nPeak pulse power - 3000 W (10/1000 µs) - 30 kW (8/20 µs)\nExcellent clamping capability;

Surface Mount TRANSZORB® Transient Voltage Suppressors

FEATURES • Bidirectional • Peak pulse power - 3000 W (10/1000 μs) - 30 kW (8/20 μs) • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization:

封装/外壳：DO-214AB，SMC 包装：卷带（TR） 描述：TVS DIODE 36VWM 58.1VC DO214AB 电路保护 TVS - 二极管

封装/外壳：DO-214AB，SMC 包装：剪切带（CT）带盒（TB） 描述：3KW, 36V 5%,BIDIR,SMC TVS 电路保护 TVS - 二极管

TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type

○ High-Speed Switching Applications • 1.5-V drive • Low ON-resistance : Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

○ High-Speed Switching Applications • 1.5-V drive • Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66 Ω (m

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

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