Surface Mount TRANSZORB® Transient Voltage Suppressors

FEATURES • Available in bidirectional polarity only • 3000 W peak pulse power capability with a (10/1000 μs) waveform • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Not recommende

Surface Mount TRANSZORB® Transient Voltage Suppressors

文件：91.78 Kbytes Page：4 Pages

Surface Mount TRANSZORB® Transient Voltage Suppressors

FEATURES • Bidirectional • Peak pulse power - 3000 W (10/1000 μs) - 30 kW (8/20 μs) • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization:

封装/外壳：DO-214AB，SMC 包装：卷带（TR） 描述：TVS DIODE 36VWM 58.1VC DO214AB 电路保护 TVS - 二极管

封装/外壳：DO-214AB，SMC 包装：剪切带（CT）带盒（TB） 描述：3KW, 36V 5%,BIDIR,SMC TVS 电路保护 TVS - 二极管

TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type

○ High-Speed Switching Applications • 1.5-V drive • Low ON-resistance : Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

○ High-Speed Switching Applications • 1.5-V drive • Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66 Ω (m

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

文件：221.59 Kbytes Page：5 Pages