600 W TVS in SMB Flat

Features • Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range from 5 V to 188 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: up to 47

封装/外壳：DO-221AA，SMB（直引线） 包装：卷带（TR） 描述：TVS DIODE 23VWM 37.8VC SMBFLAT 电路保护 TVS - 二极管

600 W TVS in SMB Flat

Automotive 600 W, 23 V TVS in SMB Flat

封装/外壳：DO-221AA，SMB（直引线） 包装：卷带（TR） 描述：TVS DIODE 23VWM 37.8VC SMBFLAT 电路保护 TVS - 二极管

Automotive 600 W TVS in SOD128 Flat

Features • AEC-Q101 qualified • Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs) • Stand-off voltage range from 5 V to 36 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at 175 °C (Tj max.) up to 240

N-Channel Enhancement Mode MOSFET

文件：307.91 Kbytes Page：11 Pages

N-Channel Enhancement Mode MOSFET

文件：307.91 Kbytes Page：11 Pages

N-Channel Enhancement Mode MOSFET

文件：307.91 Kbytes Page：11 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.10975 Mbytes Page：10 Pages