Cascadable Amplifier 2000 to 6000 MHz

Description The A6011 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage GaAs FET feedback amplifier design displays impressive performance characteristics over a broadband frequency range. An RF

2000 TO 6000 MHz CASCADABLE AMPLIFIER

2000 TO 6000 MHz CASCADABLE AMPLIFIER • LOW NOISE FIGURE: 1.5 dB (TYP.) • MEDIUM OUTPUT POWER: +18 dBm (TYP.) • HIGH EFFICIENCY: 58 mA (TYP.) @ +5 Vdc • PHEMT AMPLIFIER

2000 TO 6000 MHz CASCADABLE AMPLIFIER

Description The A6011 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage GaAs FET feedback amplifier design displays impressive performance characteristics over a broadband frequency range. An RF

Cascadable, Low Noise, Low Volt

The SMA6011 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage GaAs FET feedback amplifier design displays impressive performance characteristics over a broadband frequency range. An RF choke is us ·Low Noise Figure: 1.5 dB (Typ.)\n·Phemt Amplifier\n·High Efficiency: 58 mA (Typ.) @ +5 Vdc\n·Medium Output Power: +18 dBm (Typ.);

Cascadable Amplifier 2000 to 6000 MHz

文件：374.86 Kbytes Page：2 Pages

封装/外壳：4-SMD 模块 包装：带 描述：AMPLIFIER,SURFACE MOUNT RF/IF，射频/中频和 RFID 射频放大器

Cascadable Amplifier 2000 to 6000 MHz

文件：637.25 Kbytes Page：3 Pages

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • T-MAX™ or TO-264 P

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden

Fast Recovery Rectifier, 40A, 200ns

Description: The NTE6006 through NTE6011 are fast recovery silicon rectifiers in a DO5 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference, sonar power supplies, and free wheeling diodes. A complete lin

High-speed Data Converter

High-speed Data Converter

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free