Dual N-Channel Enhancement Mode MOSFET

文件：234.36 Kbytes Page：10 Pages

N-Channel MOSFET

Dual N-Channel Enhancement Mode MOSFET

文件：234.36 Kbytes Page：10 Pages

Dual N-Channel Enhancement Mode MOSFET

文件：235.53 Kbytes Page：10 Pages

Dual N-Channel Enhancement Mode MOSFET

N-Channel MOSFET

Dual N-Channel Enhancement Mode MOSFET

文件：235.53 Kbytes Page：10 Pages

Dual N-Channel Enhancement Mode MOSFET

文件：180.35 Kbytes Page：11 Pages

Dual N-Channel Enhancement Mode MOSFET

文件：180.35 Kbytes Page：11 Pages

Schottky Barrier Diodes TM Ultra High Drive Monolithic

DESCRIPTION Microsemi’s Schottky Barrier devices are currently available in the eight junction ring quad configuration. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest frequency, broad

14dBm to 20dBm LO Buffers with 짹1dB Variation

General Description The MAX9989 and MAX9990 LO buffers provide the high output (+14dBm to +20dBm) necessary to drive the LO inputs of high-linearity passive mixers, while offering 40dB reverse isolation to prevent LO pulling. The MAX9989 is internally matched for the cellular/GSM bands, and the M

14dBm to 20dBm LO Buffers with 짹1dB Variation

General Description The MAX9989 and MAX9990 LO buffers provide the high output (+14dBm to +20dBm) necessary to drive the LO inputs of high-linearity passive mixers, while offering 40dB reverse isolation to prevent LO pulling. The MAX9989 is internally matched for the cellular/GSM bands, and the M

Three-Channel CCM/DCM Boost LED Driver with Sub-Microsecond PWM Dimming

文件：624.21 Kbytes Page：22 Pages

14dBm to 20dBm Adjustable Output Power

文件：230.5 Kbytes Page：7 Pages