SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay

1 Features 1• Renewable Energy Grade • Drives both a High Side and Low Side N-Channel MOSFET • Adaptive Rising and Falling Edges with Programmable Additional Delay • Single Input Control • Bootstrap Supply Voltage Range up to 118V DC • Fast Turn-Off Propagation Delay (25 ns Typical) • Dri

SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay

文件：1.18978 Mbytes Page：25 Pages

SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay

1 Features 1• Renewable Energy Grade • Drives both a High Side and Low Side N-Channel MOSFET • Adaptive Rising and Falling Edges with Programmable Additional Delay • Single Input Control • Bootstrap Supply Voltage Range up to 118V DC • Fast Turn-Off Propagation Delay (25 ns Typical) • Dri

SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay

1 Features 1• Renewable Energy Grade • Drives both a High Side and Low Side N-Channel MOSFET • Adaptive Rising and Falling Edges with Programmable Additional Delay • Single Input Control • Bootstrap Supply Voltage Range up to 118V DC • Fast Turn-Off Propagation Delay (25 ns Typical) • Dri

SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay

1 Features 1• Renewable Energy Grade • Drives both a High Side and Low Side N-Channel MOSFET • Adaptive Rising and Falling Edges with Programmable Additional Delay • Single Input Control • Bootstrap Supply Voltage Range up to 118V DC • Fast Turn-Off Propagation Delay (25 ns Typical) • Dri

封装/外壳：10-WDFN 裸露焊盘 包装：卷带（TR） 描述：IC GATE DRVR HALF-BRIDGE 10WSON 集成电路（IC） 栅极驱动器

SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay

文件：1.18978 Mbytes Page：25 Pages

SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay

文件：1.18978 Mbytes Page：25 Pages

1M x 4 4Mb Asynchronous SRAM

Description The GS74104A is a high speed CMOS Static RAM organized as 1,048,576 words by 4 bits. Static design eliminates the need for external clocks or timing strobes. The GS operates on a single 3.3 V power supply and all inputs and outputs are TTL-compatible. The GS74104A is available in 400

1M x 4 4Mb Asynchronous SRAM

Description The GS74104 is a high speed CMOS Static RAM organized as 1,048,576 words by 4 bits. Static design eliminates the need for external clocks or timing strobes. The GS operates on a single 3.3 V power supply and all inputs and outputs are TTL-compatible. The GS74104 is available in 400 mi