SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 125.0 Watts Single Ended Package Style AM HIGH EFFICI

RF POWER VDMOS TRANSISTOR

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VDMOS SHORTFORM S1

RF POWER VDMOS TRANSISTOR

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CATV amplifier module

DESCRIPTION Hybrid amplifier module operating at a voltage supply of 24 V (DC) encapsulated in a SOT115J package. FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability. APPLICATIONS • CAT

Silicon epitaxial planar type

Silicon epitaxial planar type For switching For wave detection ■ Features • Three isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a type in the same direction) • Low forward voltage VF , optimum for low vo

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

Silicon MOS IC

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