N-Channel Enhancement Mode MOSFET

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N-Channel MOSFET

N-Channel MOSFET

N-Channel Enhancement Mode MOSFET

文件：253.05 Kbytes Page：10 Pages

Common Mode EMI Chokes

Special Features • Dual winding • Low radiation • High current capacity • High inductance • Dielectric strength 1000Vrms • Mounted on VW-1 rated header • Fixed pins for easy PCB insertion • Operating temperature -55 to +105°C

TRI-BAND GSM/DCS/PCS LNA

DESCRIPTION The STB7003 is a tri-band LNA designed for GSM/DCS/ PCS applications. The GC pin sets the LNA gain levels. The innovative architecture implemented allows to reach very low current consumption. LNA1 works at 0.9-1.0 GHz and LNA2 over the 1.8-2GHz frequency range. • SUPPLY VOLTAGE 2.8V

HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAY

Integrating seven high-voltage, high-current npn Darlingtons into a monolithic power array, the ULN7003A AND ULN7003LW are designed for interfacing between TTL or CMOS logic and a variety of peripheral loads. The seven open-collector Darlington outputs are specified for 135 V minimum breakdown and

Inside DC Block

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Graphite Brush

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