Schottky Barrier Rectifiers Reverse Voltage 20 to100V Forward Current 5.0A

Reverse Voltage 20 to100V Forward Current 5.0A FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low power loss,high efficiency * For use in low voltage high frequency inverters, free wheeling,and polarity protection applications * Gu

SCHOTTKY DIODE REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 5.0A

DESCRIPTION The SM 5 2 0A SM 5 2 00A are available in SM A p ackage. FEATURES  Metal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, high frequency inver

Schottky/肖特基

肖特基二极管

Voltage 40V 4.0 Amp Schottky Barrier Rectifiers

文件：201.24 Kbytes Page：2 Pages

5.0Amp Schottky Barrier Rectifiers

文件：236.52 Kbytes Page：2 Pages

Schottky Barrier Rectifiers Reverse Voltage 20 to100V Forward Current 5.0A

Reverse Voltage 20 to100V Forward Current 5.0A FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low power loss,high efficiency * For use in low voltage high frequency inverters, free wheeling,and polarity protection applications * Gu

20V ~200V 5.0 Amp Surface Mount Schottky Barrier Rectifiers

20 V ~ 200 V 5.0 Amp Surface Mount Schottky Barrier Rectifiers FEATURES Ideal for surface mount applications Easy pick and place Built-in strain relief Low forward voltage drop

SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 5.0A

DESCRIPTION The SM520AF~SM5200AF are available in SMAF Package. FEATURES  Metal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, high frequency inverters,

肖特基二极管

分立

Voltage 40V 4.0 Amp Schottky Barrier Rectifiers

文件：201.24 Kbytes Page：2 Pages

Schottky Barrier Rectifiers Reverse Voltage 20 to100V Forward Current 5.0A

文件：159.21 Kbytes Page：3 Pages

丝印代码：-MG；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

NPN 9 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz. FEATURES • High power gain • Low noise figure • High transition frequency

Octal buffer/line driver; 3-state; inverting

GENERAL DESCRIPTION The 74HC/HCT540 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. FEATURES • Inverting outputs • Output capability: bus driver • ICC category: MSI

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca