512M bits DDR-II SDRAM

Description The EDE5104GB is a 512M bits DDR-II SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDE5108GB is a 512M bits DDR-II SDRAM organized as 16,777,216 words × 8 bits × 4 banks. It packaged in 64-ball µBGA® package. Features • 1.8V power supply • Double-data-rate architectur

512M bits SDRAM

Elpida is Now Micron. EDS5104ABTA (128M words x 4 bits) EDS5108ABTA (64M words x 8 bits) EDS5116ABTA (32M words x 16 bits) The EDS5104AB is a 512M bits SDRAM organized as 33,554,432 words ×4 bits ×4 banks. The EDS5108AB is a 512M bits SDRAM organized as 16,777,216 word

FDDI, 100 Mbps ATM, and Fast Ethernet Transceivers in Low Cost 1x9 Package Style

Description The HFBR-5100 family of transceivers from Hewlett-Packard provide the system designer with products to implement a range of FDDI and ATM (Asynchronous Transfer Mode) designs at the 100 Mbps/125 MBd rate. Features • Full Compliance with the Optical Performance Requirements of the FDD

Radiation Hardened Low Noise Quad Operational Amplifier

Radiation Hardened, Low Noise Quad Operational Amplifiers The HS-5104ARH, HS-5104AEH are radiation hardened, monolithic quad operational amplifiers that provide highly reliable performance in harsh radiation environments. Excellent noise characteristics coupled with a unique array of dynamic spec

9 WATT REGULATED DC/DC CONVERTER

DESCRIPTION The PWR5104 and PWR5105 offer respectively ±12VDC and ±15VDC outputs of regulated 9W power driven from your +5V system bus. These units are designed for use in such diverse applications as process control, telecommunications, portable equipment, medical systems, airborne and shipboard

CMOS LSI (LOW-POWER COMPLEMENTARY MOS) PLL FREQUENCY SYNTHESIZERS

CMOS LSI (LOW-POWER COMPLEMENTARY MOS) PLL FREQUENCY SYNTHESIZERS