Mini-Beam系列工业标准的传感器

Worlds most popular photoelectric sensor. Compact, high-performance sensors with 18 mm threaded lens or side mount.\n\n• Extensive family in all sensing modes and ranges to 30 m\n\n• Models for ac, dc, or ac/dc universal voltage operation\n\n• Infrared or visible red, green, blue or white sensing be

包装：盒 描述：MINI-BEAM: MODIFIED HIGH SPEED V 传感器，变送器 光学传感器 - 光电，工业

Mini-Beam系列工业标准的传感器

Worlds most popular photoelectric sensor. Compact, high-performance sensors with 18 mm threaded lens or side mount.\n\n• Extensive family in all sensing modes and ranges to 30 m\n\n• Models for ac, dc, or ac/dc universal voltage operation\n\n• Infrared or visible red, green, blue or white sensing be

包装：盒 描述：MINI-BEAM: MODIFIED HIGH SPEED V 传感器，变送器 光学传感器 - 光电，工业

Sequencing Hotswap Controllers

General Description The HV302 and HV312 Hotswap Controllers perform current limiting, circuit breaker protection, over and under voltage detection power management functions during insertion of cards or modules into live backplanes and connectors. Theymaybe used in systems where active contro

N-Channel Silicon Junction Field Effect Transistor

Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: • High Power Gain: 10dB Min at 400MHz • High Transconductance: 4000 µmho Min at 400MHz • Low Crss: 1pF Max • High (Yfs) / Ciss

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

Operational Amplifiers

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