0.68uH, 20%, 4.6mOhm, 17Amp Max. SMD Molded Inductor

0.033uH to 33.0uH, 20%,0.26mOhm to 310.0mOhm, 100.0Amp to 2.5Amp SMD Molded Inductor. • 7.30x6.80mm foot Print, 3.00mm Max. height SMD Power Inductor for high frequency application. Operating frequency up to 5MHz.• Inductance range from 0.033uH to 33.00uH. Custom values are welcomed.• High saturation current characteristics by distributed gapped metal dust core.• Ideal for portable d;

0.33uH, 20%, 3.5mOhm, 30Amp Max. SMD Molded Inductor

0.1uH to 10.0uH, 20%, 1.5mOhm to 105.0mOhm, 60.0Amp to 7.0Amp SMD Molded Inductor. • Molded inductor structure. No audio noise.\n• High saturation current realized by distributed gap metal dust core.\n• Low profile: 3.0 mm max. height.\n• Working frequency up to 3 MHz.\n• Ideal for DC/DC converters, PDA, notebook, and server applications.\n• T&R quantity: 1000 pieces per reel.\n• ;

0.47uH, 20%, 4mOhm, 26Amp Max. SMD Molded Inductor

0.1uH to 10.0uH, 20%, 1.5mOhm to 105.0mOhm, 60.0Amp to 7.0Amp SMD Molded Inductor. • Molded inductor structure. No audio noise.\n• High saturation current realized by distributed gap metal dust core.\n• Low profile: 3.0 mm max. height.\n• Working frequency up to 3 MHz.\n• Ideal for DC/DC converters, PDA, notebook, and server applications.\n• T&R quantity: 1000 pieces per reel.\n• ;

N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

文件：272.92 Kbytes Page：11 Pages

N-Channel Enhancement Mode MOSFET

文件：271.49 Kbytes Page：10 Pages

N-Channel 30-V (D-S) MOSFET

文件：996.88 Kbytes Page：7 Pages

N-Channel Enhancement Mode MOSFET

文件：271.49 Kbytes Page：10 Pages

N-Channel 30-V (D-S) MOSFET

文件：964.34 Kbytes Page：8 Pages

N-Channel Enhancement Mode MOSFET

文件：157.56 Kbytes Page：10 Pages

N-Channel Enhancement Mode MOSFET

文件：157.56 Kbytes Page：10 Pages

PNP video transistor

DESCRIPTION PNP video transistor in a SOT54 (TO-92) plastic package. NPN complement: BFQ231. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Buffer/driver in high

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000

Ultra Bright GaAIAs Lamps

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Ultra Bright GaAIAs Lamps

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Square Type

文件：30.74 Kbytes Page：1 Pages