P-Channel Enhancement Mode MOSFET

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P-Channel Enhancement Mode MOSFET

N-Channel MOSFET

P-Channel Enhancement Mode MOSFET

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High Speed Switching Application

High Speed Switching Application • Low Collector Saturation Voltage • Specified of Reverse Biased SOA With Inductive Load

Silicon NPN Power Transistor for Switching Power Applications

Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line–operated Switchmode Power supplies and electronic light ballasts. Features: • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hFE

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

丝印代码：E3***；P-Channel 12-V (D-S) MOSFET

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