SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

FEATURES · Plastic package has Underwriters Laboratory Flammability Classification 94V-O · For surfacemounted applications · Glass passivated junction · Lowinductance surge resistance · Fast response time:typical less than 1.0ps from 0 voltstoV(BR) for unidirectional AND 5.0ns for bidir

Surface Mount Devices

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PPTC/自恢复保险丝

SURFACE MOUNT GLASS PASSIVATED JUNCTION

Features Glass passivated device Ideal for surface mouted applications Low leakage current Metallurgically bonded construction

Surface Mount Rectifiers

REVERSE VOLTAGE:1300-2000V CURRENT: 1.0 A Features ◇ Glass passivated device ◇ Ideal for surface mouted applications ◇ Low leakage current ◇ Metallurgically bonded construction

SURFACE MOUNT GLASS PASSIVATED JUNCTION

Features ◇ Glass passivated device ◇ Ideal for surface mouted applications ◇ Low leakage current ◇ Metallurgically bonded construction Mechanical Data ◇ Case:JEDEC DO-213AB,molded plastic over passivated chip ◇ Polarity: Color band denotes cathode end ◇ Weight: 0.0046 ounces, 0.1

SURFACE MOUNT RECTIFIERS

REVERSE VOLTAGE:1300-2000V CURRENT: 1.0 A FEATURES ◇ Glass passivated device ◇ Ideal for surface mouted applications ◇ Low leakage current ◇ Metallurgically bonded construction

Surface Mount Si-Rectifiers

Surface Mount Si-Rectifiers • Nominal current 1 A • Repetitive peak reverse voltage 50 - 2000 V • Plastic case MELF DO-213AB • Weight approx. 0.12 g • Plastic material has UL classification 94V-0

Standard silicon rectifier diodes

Forward Current: 1 A Reverse Voltage: 1300 to 2000 V

SURFACE MOUNT RECTIFIER

REVERSE VOLTAGE:13000-2000V CURRENT: 1.0 A FEATURES ◇ Glass passivated device ◇ Ideal for surface mouted applications ◇ Low leakage current ◇ Metallurgically bonded construction

4 Channel White LED Driver with Internal-switch Boost Regulator

Features  5 V to 36 V Input Supply Voltage Range  Maximum Output Adjustable up to 47 V  High-Efficiency Step-up Regulator . Peak-Current Mode Control – Fast Transient . 200 kHz to 1.4 MHz Adjustable Switching Frequency . Built-in 50 V, 2.5 A, 0.18 Ω MOSFET  Four LED Current Sources . F

SMB Jack to SMB Jack Bulkhead Adapter

Features: • VSWR of 1.3:1 max up to 4 GHz • SMB interface meets MIL-STD-348A • 30 μin minimum contact plating • Gold Plated Brass Contact

6 Channel White LED Driver with Internal-switch Boost Regulator for High Power LED

Features  2.7 V to 24 V Input Supply Voltage Range  Maximum Output Adjustable up to 47 V  High-Efficiency Step-up Regulator . Peak-Current Mode Control – Fast Transient . 115 kHz to 1.1 MHz Adjustable Switching Frequency . Built-in 50 V, 2.5 A, 180 mΩ MOSFET  Six LED Current Sources .

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

FEATURES · Plastic package has Underwriters Laboratory Flammability Classification 94V-O · For surfacemounted applications · Glass passivated junction · Lowinductance surge resistance · Fast response time:typical less than 1.0ps from 0 voltstoV(BR) for unidirectional AND 5.0ns for bidir

SCHOTTKY RECTIFIER

Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and Long term reliability Designed and qualified for industrial level Baseplate: Nickel plated; Terminals: Nickel plated This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional t

Standard silicon rectifier diodes

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SURFACE MOUNT GLASS PASSIVATED RECTIFIER

文件：764.75 Kbytes Page：2 Pages

Surface Mount Silicon Rectifier Diodes

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Standard Recovery SMD Rectifier Diodes

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SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER VOLTAGE RANG 2000 Volts CURRENT 1.0 Ampere

文件：269.49 Kbytes Page：5 Pages

丝印代码：MELF；SURFACE MOUNT GLASS PASSIVATED RECTIFIER

文件：765.75 Kbytes Page：2 Pages

LED显示背光

Dual Enhancement Mode MOSFET (N- and P-Channel)

N-Channel and P-Channel MOSFET uses advanced trench technology

文件：2.57115 Mbytes Page：9 Pages

Dual Enhancement Mode MOSFET (N- and P-Channel)

文件：293.59 Kbytes Page：16 Pages

Dual Enhancement Mode MOSFET (N- and P-Channel)

文件：293.59 Kbytes Page：16 Pages

包装：托盘 描述：MAGNETIC-INDUCTIVE FLOW METER; A 传感器，变送器 流量传感器 - 工业

N-Channel Enhancement Mode MOSFET

文件：247.61 Kbytes Page：10 Pages

N-Channel Enhancement Mode MOSFET

文件：247.61 Kbytes Page：10 Pages

Released from Engineering

文件：340.09 Kbytes Page：1 Pages

包装：散装 描述：DYNAMIC MICRO SPEAKER 音频设备， 产品 扬声器

N-Channel Enhancement Mode MOSFET

文件：176.63 Kbytes Page：12 Pages

N-Channel Enhancement Mode MOSFET

文件：176.63 Kbytes Page：12 Pages

Released from Engineering

文件：330.61 Kbytes Page：1 Pages

Released from Engineering

文件：346.05 Kbytes Page：1 Pages

Released from Engineering

文件：694.79 Kbytes Page：1 Pages

RF Engine Model SM200

文件：1.40095 Mbytes Page：21 Pages

RF Engine Model SM200

文件：1.40095 Mbytes Page：21 Pages

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current ........................ 200A • VCEX Collector-emitter voltage ........... 600V • hFE DC current gain............................... 75 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION

HIGH POWER SWITCHING USE NON-INSULATED TYPE

HIGH POWER SWITCHING USE NON-INSULATED TYPE • IC Collector current ........................ 200A • VCEX Collector-emitter voltage ........... 350V • hFE DC current gain............................. 100 • Non-Insulated Type APPLICATION Robotics, Welders, Forklifts, Golf cart

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • IF (AV) Average forward current .......... 200A • VRRM Repetitive peak reverse voltage .......... 400/800/1200/1600V • VDRM Repetitive peak off-state voltage .......... 400/800/1200/1600V • MIX DOUBLE A

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • VRRM Repetitive peak reverse voltage ........ 400/800/1200/1600V • VDRM Repetitive peak off-state voltage ........ 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No.

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • IF (AV) Average forward current .......... 200A • VRRM Repetitive peak reverse voltage .......... 400/800/1200/1600V • VDRM Repetitive peak off-state voltage .......... 400/800/1200/1600V • MIX DOUBLE A