TRANSILTM

DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s. FEATURES ■ PEAK PULSE POWER : 1500

TransilTM

Description Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s. Features ■ Peak pulse power

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VOLTAGE-6.8 TO 220 Volts 1500 Watt Peak Pulse Power FEATURES • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction • Low inductance • Excellent clamping capability • Repetition Ra

TRANSZORB??SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

FEATURES ♦ For surface mounted applications in order to optimize board space ♦ Low profile package ♦ Built-in strain relief ♦ Glass passivated junction ♦ Low inductance ♦ Excellent clamping capability ♦ Repetition Rate (duty cycle): 0.05 ♦ Fast reponse time: typically less than 1ps from 0

Surface Mount TRANSZORB® Transient Voltage Suppressors

FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 μs     waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Low i

Surface Mount TRANSZORB Transient Voltage Suppressors

FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 μs waveform • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-

Surface Mount TRANSZORB짰 Transient Voltage Suppressors

FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in unidirectional and bidirectional • 1500 W peak pulse power capability with a 10/1000 μs waveform • Excellent clamping capability • Low inductance • Meets MSL level 1, per J-STD-0

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Features Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Plastic Material: UL Flammability Classification Rating 94V-0

1500W 15V TVS transient suppressor diode

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SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

文件：984.546 Kbytes Page：3 Pages

UNI-AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS

文件：759.39 Kbytes Page：6 Pages

Surface Mount TRANSZORB® Transient Voltage Suppressors

文件：93.11 Kbytes Page：5 Pages

Surface Mount TRANSZORB Transient Voltage Suppressors

文件：93.11 Kbytes Page：5 Pages

封装/外壳：DO-214AB，SMC 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TVS DIODE 12.8VWM 27.2VC SMC 电路保护 TVS - 二极管

Transil

DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s. FEATURES ■ PEAK PULSE POWER : 1500

Transil

DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s. FEATURES ■ PEAK PULSE POWER : 1500

Automotive 1500 W Transil

Description The SM15TY Transil series has been designed to protect sensitive automotive circuits against surges defined in ISO 7637-2 and against electrostatic discharges according to ISO 10605. The Planar technology makes it compatible with high-end circuits where low leakage current and high j

封装/外壳：DO-214AB，SMC 包装：卷带（TR） 描述：TVS DIODE 12.8VWM 21.2VC DO214AB 电路保护 TVS - 二极管

N-Channel 150 V (D-S) MOSFET

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N-Channel 150 V (D-S) MOSFET

文件：1.84162 Mbytes Page：9 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：100.12 Kbytes Page：4 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：100.53 Kbytes Page：4 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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