SILICON NPN TRIPLE DIFFUSED PLANAR DARLINGTON SILICON PNP EPITAXIAL PLANAR DARLINGTON

Silicon NPN Triple Diffused Planar Darlington Silicon PNP Epitaxial Planar Darlington

SILICON NPN TRIPLE DIFFUSED PLANAR DARLINGTON SILICON PNP EPITAXIAL PLANAR DARLINGTON

CMOS High Speed Gate Array

SWITCHING DIODE

Switching Diode

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

High-speed diode

DESCRIPTION The PMBD6050 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 70 V • Repetitive peak reverse voltage:

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

Silicon Switching Diode

Silicon Switching Diode ● For high-speed switching applications