1700 -2200 MHz High Gain and Linearity Diversity Downconversion Mixer for 2G/3G Base Station Applications

文件：281.58 Kbytes Page：10 Pages

1700 -2200 MHz High Gain and Linearity Diversity Downconversion Mixer for 2G/3G Base Station Applications

1700 -2200 MHz High Gain and Linearity Diversity Downconversion Mixer for 2G/3G Base Station Applications

文件：281.58 Kbytes Page：10 Pages

100V, 60A Enhancement Mode GaN Power Transistor

Features • Very low rDS(ON) 5mΩ (typical) • Ultra low total gate charge 14nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV•cm2/mg • ISL70023SEH radiation accepting testing • High dose rate (50-300rad(Si)/s): 100krad(Si) • Low dose rate

100V, 60A Enhancement Mode GaN Power Transistor

Features • Very low rDS(ON) 5mΩ (typical) • Ultra low total gate charge 14nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV•cm2/mg • ISL70023SEH radiation accepting testing • High dose rate (50-300rad(Si)/s): 100krad(Si) • Low dose rate

100V, 60A Enhancement Mode GaN Power Transistor

Features • Very low rDS(ON) 5mΩ (typical) • Ultra low total gate charge 14nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV•cm2/mg • ISL70023SEH radiation accepting testing • High dose rate (50-300rad(Si)/s): 100krad(Si) • Low dose rate

MMCX PLUG STRAIGHT CRIMP, RG174, 316

文件：148.42 Kbytes Page：2 Pages