700 - 1000 MHz High Gain and Linearity Diversity Downconversion Mixer for 2G/3G Base Station Transceiver Applications

文件：509.78 Kbytes Page：17 Pages

700 – 1000 MHz High Gain and Linearity Diversity Downconversion Mixer for 2G/3G Base Station Transceiver Applications

Please note: SKY73020-11 is being discontinued and is not recommended for new designs. Please note: SKY73020-11 is not recommended for new designs. Recommended repl • Operating frequency range: 700 to 1000 MHz\n• IF frequency range: 50 to 250 MHz\n• Conversion gain: 7.0 dB\n• Input IP3: +27.0 dBm\n• Output IP3: +34.0 dBm\n• Noise Figure: 10.2 dB\n• Integrated LO drivers\n• Integrated low-loss RF baluns\n• High linearity IF amplifiers\n• On-chip SPDT LO switch (;

700 - 1000 MHz High Gain and Linearity Diversity Downconversion Mixer for 2G/3G Base Station Transceiver Applications

文件：509.78 Kbytes Page：17 Pages

700 to 1000 MHz High-Gain and High-Linearity Diversity Downconversion Mixer for 2G/3G Base Station Transceiver Applications

文件：493.88 Kbytes Page：20 Pages

40V, 65A Enhancement Mode GaN Power Transistors

Features • Very low rDS(ON) 3.5mΩ (typical) • Ultra low total gate charge 19nC (typical) • ISL70020SEH radiation acceptance testing ○ High dose rate (50-300rad(Si)/s): 100krad(Si) ○ Low dose rate (0.01rad(Si)/s): 75krad(Si) • ISL73020SEH radiation acceptance testing ○ Low dose rate (0.01rad

40V, 65A Enhancement Mode GaN Power Transistors

Features • Very low rDS(ON) 3.5mΩ (typical) • Ultra low total gate charge 19nC (typical) • ISL70020SEH radiation acceptance testing ○ High dose rate (50-300rad(Si)/s): 100krad(Si) ○ Low dose rate (0.01rad(Si)/s): 75krad(Si) • ISL73020SEH radiation acceptance testing ○ Low dose rate (0.01rad

40V, 65A Enhancement Mode GaN Power Transistors

Features • Very low rDS(ON) 3.5mΩ (typical) • Ultra low total gate charge 19nC (typical) • ISL70020SEH radiation acceptance testing ○ High dose rate (50-300rad(Si)/s): 100krad(Si) ○ Low dose rate (0.01rad(Si)/s): 75krad(Si) • ISL73020SEH radiation acceptance testing ○ Low dose rate (0.01rad

40V, 65A Enhancement Mode GaN Power Transistors

Features • Very low rDS(ON) 3.5mΩ (typical) • Ultra low total gate charge 19nC (typical) • ISL70020SEH radiation acceptance testing ○ High dose rate (50-300rad(Si)/s): 100krad(Si) ○ Low dose rate (0.01rad(Si)/s): 75krad(Si) • ISL73020SEH radiation acceptance testing ○ Low dose rate (0.01rad