700 - 1000 MHz High Gain and Linearity Diversity Downconversion Mixer for 2G/3G Base Station Transceiver Applications

文件：509.78 Kbytes Page：17 Pages

700 - 1000 MHz High Gain and Linearity Diversity Downconversion Mixer for 2G/3G Base Station Transceiver Applications

文件：509.78 Kbytes Page：17 Pages

700 – 1000 MHz High Gain and Linearity Diversity Downconversion Mixer for 2G/3G Base Station Transceiver Applications

700 to 1000 MHz High-Gain and High-Linearity Diversity Downconversion Mixer for 2G/3G Base Station Transceiver Applications

文件：493.88 Kbytes Page：20 Pages

40V, 65A Enhancement Mode GaN Power Transistors

Features • Very low rDS(ON) 3.5mΩ (typical) • Ultra low total gate charge 19nC (typical) • ISL70020SEH radiation acceptance testing ○ High dose rate (50-300rad(Si)/s): 100krad(Si) ○ Low dose rate (0.01rad(Si)/s): 75krad(Si) • ISL73020SEH radiation acceptance testing ○ Low dose rate (0.01rad

40V, 65A Enhancement Mode GaN Power Transistors

Features • Very low rDS(ON) 3.5mΩ (typical) • Ultra low total gate charge 19nC (typical) • ISL70020SEH radiation acceptance testing ○ High dose rate (50-300rad(Si)/s): 100krad(Si) ○ Low dose rate (0.01rad(Si)/s): 75krad(Si) • ISL73020SEH radiation acceptance testing ○ Low dose rate (0.01rad

40V, 65A Enhancement Mode GaN Power Transistors

Features • Very low rDS(ON) 3.5mΩ (typical) • Ultra low total gate charge 19nC (typical) • ISL70020SEH radiation acceptance testing ○ High dose rate (50-300rad(Si)/s): 100krad(Si) ○ Low dose rate (0.01rad(Si)/s): 75krad(Si) • ISL73020SEH radiation acceptance testing ○ Low dose rate (0.01rad

40V, 65A Enhancement Mode GaN Power Transistors

Features • Very low rDS(ON) 3.5mΩ (typical) • Ultra low total gate charge 19nC (typical) • ISL70020SEH radiation acceptance testing ○ High dose rate (50-300rad(Si)/s): 100krad(Si) ○ Low dose rate (0.01rad(Si)/s): 75krad(Si) • ISL73020SEH radiation acceptance testing ○ Low dose rate (0.01rad

Revolving Ball Knobs

文件：208.23 Kbytes Page：1 Pages