HIP3??Variable Attenuator for AMPS and GSM Base Stations

Description The SKY12143-315 is a voltage controlled, variable attenuator from Skyworks series of HIP3™ components. It is specifically designed and specified for use as a wide dynamic range, low distortion attenuator for AMPS and GSM base station applications centered at 881.5 MHz and 942.5 MHz.

HIP3??Variable Attenuator for DCS and PCS Base Stations

Description The SKY12144-315 is a voltage controlled, variable attenuator from Skyworks series of HIP3™ components. It is specifically designed and specified for use as a wide dynamic range, lowdistortion attenuator for DCS and PCS base station applications centered at 1837.5 MHz and 1960 MHz. Th

HIP3??Variable Attenuator for UMTS Base Stations

Description The SKY12145-315 is a voltage controlled, variable attenuator from Skyworks series of HIP3™ components. It is specifically designed and specified for use as a wide dynamic range, lowdistortion attenuator for UMTS base station applications centered at 2140 MHz. The SKY12145-315 employs

GaAs IC 25 dB Voltage Variable Attenuator 2.7-4.0 GHz

Description The SKY12146-321 is a GaAs IC PHEMT voltage variable attenuator that has been designed for WLAN applications. Operating from 2.7–4 GHz, the SKY12146-321 is ideal for low-cost applications such as 3.5 GHz fixed wireless LAN power control applications. Features ● Power control for 3.5

0.9 to 4.0 GHz 50 W High-Power Silicon PIN Diode SPDT Switch

Applications  Transmit/receive switching and failsafe switching in TD-SCDMA, WiMAX, and LTE base stations  Transmit/receive switching in land mobile radios and military communication systems Features  High-power handling: 50 W CW, 300 W peak  Low insertion loss: 0.4 dB typical  Cont

0.9 to 4.0 GHz 50 W High-Power Silicon PIN Diode SPDT Switch

Applications  Transmit/receive switching and failsafe switching in TD-SCDMA, WiMAX, and LTE base stations  Transmit/receive switching in land mobile radios and military communication systems Features  High-power handling: 50 W CW, 300 W peak  Low insertion loss: 0.4 dB typical  Cont

SKY12207-478LF 0.9-4.0 GHz 50 W High Power Silicon PIN Diode SPDT Switch

Description The SKY12207-478LF is a high power handling, Single-Pole, Double-Throw (SPDT) silicon PIN diode switch. The device operates over the 900 MHz to 4 GHz band. It features low insertion loss, excellent power handling, and superb linearity with low DC power consumption. The SKY12207-478LF

0.02 to 2.7 GHz 50 W High Power Silicon PIN Diode SPDT Switch

Applications  Transmit/receive and fail-safe switching in land mobile radios, public safety radios, and military communication systems Features  High power handling: 50 W CW, 300 W peak  Low insertion loss: 0.3 dB typical  Controlled with positive power supply  High antenna to receiv

0.02 to 2.7 GHz 50 W High Power Silicon PIN Diode SPDT Switch

Applications  Transmit/receive and fail-safe switching in land mobile radios, public safety radios, and military communication systems Features  High power handling: 50 W CW, 300 W peak  Low insertion loss: 0.3 dB typical  Controlled with positive power supply  High antenna to receiv

0.9 to 4.0 GHz 40 W High Power Silicon PIN Diode SPDT Switch

Applications  Transmit/receive switching and RF path switching in TD-SCDMA, WiMAX, and LTE base stations  Transmit/receive and RF path switching in land mobile radios and military communication systems Features  High power handling: 40 W CW  Low insertion loss: 0.3 dB typical  High

0.9 to 4.0 GHz 40 W High Power Silicon PIN Diode SPDT Switch

Applications  Transmit/receive switching and RF path switching in TD-SCDMA, WiMAX, and LTE base stations  Transmit/receive and RF path switching in land mobile radios and military communication systems Features  High power handling: 40 W CW  Low insertion loss: 0.3 dB typical  High

0.05 to 2.70 GHz 40 W High Power Silicon PIN Diode SPDT Switch

Applications  Transmit/receive switching and RF path switching in TDSCDMA, WiMAX, and LTE base stations  Transmit/receive and RF path switching in land mobile radios, public safety radio, cable TV, and military communication systems Features  High power handling: 40 W CW  Low inserti

0.05 to 2.70 GHz 40 W High Power Silicon PIN Diode SPDT Switch

Applications  Transmit/receive switching and RF path switching in TDSCDMA, WiMAX, and LTE base stations  Transmit/receive and RF path switching in land mobile radios, public safety radio, cable TV, and military communication systems Features  High power handling: 40 W CW  Low inserti

SKY12212-478LF 0.05-2.70 GHz, 100 W High Power Silicon PIN Diode SPDT Switch

Description The SKY12212-478LF is a high-power handling, single-pole, double-throw (SPDT) silicon PIN diode switch. The device operates over the 50 MHz to 2.7 GHz band. It features low insertion loss, excellent power handling, and superb linearity with low DC power consumption. The SKY12212-478L

0.9 to 4.0 GHz, 125 W High-Power Silicon PIN Diode SPDT Switch

Applications  Transmit/receive switching and failsafe switching in TD-SCDMA, WiMAX, and LTE base stations  Transmit/receive switching in land mobile radios and military communication systems Features  High-power handling: 125 W CW  Low insertion loss: 0.4 dB typical  High antenna to

0.9 to 4.0 GHz, 125 W High-Power Silicon PIN Diode SPDT Switch

Applications  Transmit/receive switching and failsafe switching in TD-SCDMA, WiMAX, and LTE base stations  Transmit/receive switching in land mobile radios and military communication systems Features  High-power handling: 125 W CW  Low insertion loss: 0.4 dB typical  High antenna to

HIP3™ Temperature Compensated Variable Attenuator 700–1200 MHz

Features ● New internal temperature compensation ● 25 dB attenuation range ● 0–12 V control voltage ● High input IP3: 53 dBm ● Wideband operation 700–1200 MHz ● Small MCM lead (Pb)-free and RoHS-compliant package

HIP3™ Temperature Compensated Voltage Variable Attenuator 1.50–2.50 GHz

Features ● Broadband: 1.50–2.50 GHz ● Attenuation range: 25 dB ● Control voltage range: 0–12 V ● High input IP3: 53 dBm ● Low current consumption:

HIP3™ Temperature Compensated Voltage Variable Attenuator 1.650–2.650 GHz

Features ● Broadband: 1.65–2.65 GHz ● Attenuation range: 25 dB ● Control voltage range: 0–12 V ● High input IP3: 57 dBm ● Low current consumption:

SKY12233-11: High IIP3 2.1 to 3.1 GHz Voltage-Controlled Variable Attenuator

Applications  Automatic power leveling/gain control circuits in cellular base stations and point-to-point radio IF chains  General wireless systems including WiMAX, LTE, WCDMA, VSAT, and military communications Features  2.1 to 3.1 GHz broadband operating range  Maximum attenuation valu

SKY12233-11: High IIP3 2.1 to 3.1 GHz Voltage-Controlled Variable Attenuator

Applications  Automatic power leveling/gain control circuits in cellular base stations and point-to-point radio IF chains  General wireless systems including WiMAX, LTE, WCDMA, VSAT, and military communications Features  2.1 to 3.1 GHz broadband operating range  Maximum attenuation valu

SKY12239-11: High IIP3 10 MHz to 1.5 GHz Voltage-Controlled Variable Attenuator

Applications  Automatic power leveling/gain control circuits in cellular base stations and point-to-point radio IF chains  General wireless systems including WiMAX, LTE, WCDMA, VSAT, and military communications Features  10 MHz to 1.5 GHz broadband operating range  Low insertion loss: 2

SKY12239-11: High IIP3 10 MHz to 1.5 GHz Voltage-Controlled Variable Attenuator

Applications  Automatic power leveling/gain control circuits in cellular base stations and point-to-point radio IF chains  General wireless systems including WiMAX, LTE, WCDMA, VSAT, and military communications Features  10 MHz to 1.5 GHz broadband operating range  Low insertion loss: 2

1.8 to 3.0 GHz, 100 W Compact High-Power SPDT Switch with Integrated Driver

Applications  TDD 2G/3G/4G LTE systems  High-power switch for micro-cell and macro-cell base stations  Active antenna array Features  Compact, integrated high-power switch with driver circuit  Small PCB footprint with minimal external components  Requires only a single +5 V DC suppl

1.8 to 3.0 GHz, 100 W Compact High-Power SPDT Switch with Integrated Driver

Applications  TDD 2G/3G/4G LTE systems  High-power switch for micro-cell and macro-cell base stations  Active antenna array Features  Compact, integrated high-power switch with driver circuit  Small PCB footprint with minimal external components  Requires only a single +5 V DC suppl

1.8 to 3.0 GHz, 100 W Compact High-Power SPDT Switch with Integrated Driver

Applications  TDD 2G/3G/4G LTE systems  High-power switch for micro-cell and macro-cell base stations  Active antenna array Features  Compact, integrated high-power switch with driver circuit  Small PCB footprint with minimal external components  Requires only a single +5 V DC suppl

0.3 to 5.0 GHz, 100 W Compact High-Power SPDT Switch with Integrated Driver

Features • Compact, integrated high-power switch with driver circuit • Small PCB footprint with minimal external components • Requires only a single +5 V DC supply, and a 0 to 3 V logic control • Low TX/RX insertion loss • High TX to RX isolation • Low DC power consumption:

0.3 to 5.0 GHz, 100 W Compact High-Power SPDT Switch with Integrated Driver

Features • Compact, integrated high-power switch with driver circuit • Small PCB footprint with minimal external components • Requires only a single +5 V DC supply, and a 0 to 3 V logic control • Low TX/RX insertion loss • High TX to RX isolation • Low DC power consumption:

0.3 to 5.0 GHz, 100 W Compact High-Power SPDT Switch with Integrated Driver

Features • Compact, integrated high-power switch with driver circuit • Small PCB footprint with minimal external components • Requires only a single +5 V DC supply, and a 0 to 3 V logic control • Low TX/RX insertion loss • High TX to RX isolation • Low DC power consumption:

0.3 to 5.0 GHz, 100 W Compact High-Power SPDT Switch with Integrated Driver

Features • Compact, integrated high-power switch with driver circuit • Small PCB footprint with minimal external components • Requires only a single +5 V DC supply, and a 0 to 3 V logic control • Low TX/RX insertion loss • High TX to RX isolation • Low DC power consumption:

0.3 to 5.0 GHz, 100 W Compact High-Power SPDT Switch with Integrated Driver

Features • Compact, integrated high-power switch with driver circuit • Small PCB footprint with minimal external components • Requires only a single +5 V DC supply, and a 0 to 3 V logic control • Low TX/RX insertion loss • High TX to RX isolation • Low DC power consumption:

0.3 to 5.0 GHz, 100 W Compact High-Power SPDT Switch with Integrated Driver

Features • Compact, integrated high-power switch with driver circuit • Small PCB footprint with minimal external components • Requires only a single +5 V DC supply, and a 0 to 3 V logic control • Low TX/RX insertion loss • High TX to RX isolation • Low DC power consumption:

10 MHz - 1.0 GHz Six-Bit Digital Attenuator with Driver (0.5 dB LSB, 31.5 dB Range)

Features • Attenuation: 31.5 dB with 0.5 dB LSB • Onboard, low-noise CMOS driver • Excellent RF noise floor • Single 5 V supply • Very low DC power consumption • Single, positive control for each bit • Small, QFN (32-pin, 5 x 5 mm) package (MSL1, 260 °C per JEDEC J-STD-020)

10 MHz - 1.0 GHz Six-Bit Digital Attenuator with Driver (0.5 dB LSB, 31.5 dB Range)

Features • Attenuation: 31.5 dB with 0.5 dB LSB • Onboard, low-noise CMOS driver • Excellent RF noise floor • Single 5 V supply • Very low DC power consumption • Single, positive control for each bit • Small, QFN (32-pin, 5 x 5 mm) package (MSL1, 260 °C per JEDEC J-STD-020)

SKY12338-337LF: 0.35 to 4.0 GHz Two-Bit Digital Attenuator

Applications  Cellular infrastructure  Wireless receivers Features  Positive voltage operation: 2.65 to 5 V per bit  Broadband operation: 0.35 to 4.0 GHz  Attenuation: 18 dB with 6 dB LSB  Low insertion loss: 0.75 dB @ 2 GHz  Absorptive in 50 Ω systems  Small, QFN (12-pin, 3 x 3 m

0.35 to 4.0 GHz Two-Bit Digital Attenuator

Features  Positive voltage operation: 2.65 to 5 V per bit  Broadband operation: 0.35 to 4.0 GHz  Attenuation: 18 dB with 6 dB LSB  Low insertion loss: 0.75 dB @ 2 GHz  Absorptive in 50 Ω systems  Small, QFN (12-pin, 3 x 3 mm) package (MSL1, 260 C per JEDEC J-STD-020)

0.35 to 4.0 GHz Two-Bit Digital Attenuator

Features  Positive voltage operation: 2.65 to 5 V per bit  Broadband operation: 0.35 to 4.0 GHz  Attenuation: 18 dB with 6 dB LSB  Low insertion loss: 0.75 dB @ 2 GHz  Absorptive in 50 Ω systems  Small, QFN (12-pin, 3 x 3 mm) package (MSL1, 260 C per JEDEC J-STD-020)

SKY12338-337LF: 0.35 to 4.0 GHz Two-Bit Digital Attenuator

Applications  Cellular infrastructure  Wireless receivers Features  Positive voltage operation: 2.65 to 5 V per bit  Broadband operation: 0.35 to 4.0 GHz  Attenuation: 18 dB with 6 dB LSB  Low insertion loss: 0.75 dB @ 2 GHz  Absorptive in 50 Ω systems  Small, QFN (12-pin, 3 x 3 m

0.01 to 4.0 GHz Seven-Bit Digital Attenuator with Serial and Parallel Drivers

Features  Broadband operation: 0.01 to 4.0 GHz  Attenuation range: 31.75 dB with 0.25 dB LSB  TTL/CMOS-compatible serial, parallel, or latched parallel control interface  Single supply voltage: +3.3 or +5 V  Small QFN (32-pin, 5 x 5 mm) Pb-free package (MSL1, 260 C per JEDEC J-STD-020

0.01 to 4.0 GHz Seven-Bit Digital Attenuator with Serial and Parallel Drivers

Features  Broadband operation: 0.01 to 4.0 GHz  Attenuation range: 31.75 dB with 0.25 dB LSB  TTL/CMOS-compatible serial, parallel, or latched parallel control interface  Single supply voltage: +3.3 or +5 V  Small QFN (32-pin, 5 x 5 mm) Pb-free package (MSL1, 260 C per JEDEC J-STD-020

DC-3.0 GHz Six-Bit Digital Attenuator with Serial or Parallel Driver (0.5 dB LSB)

Features • Broadband operation: DC to 3.0 GHz • Attenuation: 31.5 dB with 0.5 dB LSB • TTL/CMOS-compatible serial, parallel, or latched parallel control interface • Single supply voltage: +3.3 or +5 V • Small, QFN (24-pin, 4 x 4 mm) package (MSL1, 260 °C per JEDEC J-STD-020)

DC-3.0 GHz Six-Bit Digital Attenuator with Serial or Parallel Driver (0.5 dB LSB)

Features • Broadband operation: DC to 3.0 GHz • Attenuation: 31.5 dB with 0.5 dB LSB • TTL/CMOS-compatible serial, parallel, or latched parallel control interface • Single supply voltage: +3.3 or +5 V • Small, QFN (24-pin, 4 x 4 mm) package (MSL1, 260 °C per JEDEC J-STD-020)

SKY12349-362LF: 0.7-4.0 GHz Five-Bit Digital Attenuator with Serial-to-Parallel Driver

Applications • Base stations • Wireless and RF data • Wireless local loop gain control circuits Features • Broadband operation: 0.7 to 4.0 GHz • Attenuation: 15.5 dB • LSB attenuation: 0.5 dB • Low insertion loss: 1 dB @ 900 MHz • Positive voltage operation: 5 V • Integrated silicon seri

SKY12349-362LF: 0.7-4.0 GHz Five-Bit Digital Attenuator with Serial-to-Parallel Driver

Applications • Base stations • Wireless and RF data • Wireless local loop gain control circuits Features • Broadband operation: 0.7 to 4.0 GHz • Attenuation: 15.5 dB • LSB attenuation: 0.5 dB • Low insertion loss: 1 dB @ 900 MHz • Positive voltage operation: 5 V • Integrated silicon seri

SKY12355-337LF: 0.35 to 4.0 GHz Two-Bit Digital Attenuator

Applications  Cellular infrastructure  Wireless receivers Features  Positive voltage operation with integrated decoder  Broadband operation: 0.35 to 4.0 GHz  Attenuation: 18 dB with 6 dB LSB  Low insertion loss: 0.6 dB @ 2 GHz  Absorptive in 50 Ω systems  Small QFN (12-pin, 3 x 3

SKY12355-337LF: 0.35 to 4.0 GHz Two-Bit Digital Attenuator

Applications  Cellular infrastructure  Wireless receivers Features  Positive voltage operation with integrated decoder  Broadband operation: 0.35 to 4.0 GHz  Attenuation: 18 dB with 6 dB LSB  Low insertion loss: 0.6 dB @ 2 GHz  Absorptive in 50 Ω systems  Small QFN (12-pin, 3 x 3

50-600 MHz, 12 dB 100 Ω Differential Digital Attenuator

Features • Dual, positive voltage operation: 0/1.8-5.0 V • High bit accuracy: ±0.3 dB @ 200 MHz • Low insertion loss: 0.3 dB @ 200 MHz • Absorptive in 100 Ω differential systems • Small, QFN (12-pin, 3 x 3 mm) package (MSL1, 260 °C per JEDEC J-STD-020)

50-600 MHz, 12 dB 100 Ω Differential Digital Attenuator

Features • Dual, positive voltage operation: 0/1.8-5.0 V • High bit accuracy: ±0.3 dB @ 200 MHz • Low insertion loss: 0.3 dB @ 200 MHz • Absorptive in 100 Ω differential systems • Small, QFN (12-pin, 3 x 3 mm) package (MSL1, 260 °C per JEDEC J-STD-020)

SKY12408-321LF: 50-600 MHz, 6 dB 100 Ω Differential Digital Attenuator

Applications • Cellular/3G infrastructure • IF/RF systems Features • Dual, positive voltage operation: 0/1.8-5.0 V • High bit accuracy: ±0.3 dB @ 200 MHz • Low insertion loss: 0.3 dB @ 200 MHz • Absorptive in 100 Ω differential systems • Small, QFN (12-pin, 3 x 3 mm) package (MSL1, 260 °C

SKY12408-321LF: 50-600 MHz, 6 dB 100 Ω Differential Digital Attenuator

Applications • Cellular/3G infrastructure • IF/RF systems Features • Dual, positive voltage operation: 0/1.8-5.0 V • High bit accuracy: ±0.3 dB @ 200 MHz • Low insertion loss: 0.3 dB @ 200 MHz • Absorptive in 100 Ω differential systems • Small, QFN (12-pin, 3 x 3 mm) package (MSL1, 260 °C

SKY13314-374LF 0.1-6.0 GHz GaAs SPDT Switch

Description The SKY13314-374LF is a pHEMT GaAs I/C antenna switch. Switching between the antenna and TX or RX ports is accomplished with two control voltages. The low-loss, high isolation, high linearity, small size and low cost make this switch ideal for all dual-band WLAN systems that operate a

GaAs IC SPST Non-Reflective Switch 300 kHz -2.5 GHz

Description The SKY13316-12LF is a non-reflective SPST switch designed for low cost, low power commercial applications. It is ideal for use as a building block for high isolation multi-throw switches. Features • High isolation (50 dB @ 900 MHz) • J1 reflective (open) in isolation state • J2 n

20 MHz to 6.0 GHz pHEMT GaAs SP3T Switch

Applications • 802.11 a/b/g/n WLAN networks • For devices that support Bluetooth® signals Features • Positive low voltage control: 0/1.8 to 5.0 V • Low insertion loss: 0.5 dB @ 2.5 GHz, 0.9 dB @ 6 GHz • High isolation: 25 dB up to 6 GHz • Excellent linearity performance: P1dB = +29 dBm •

20 MHz to 6.0 GHz pHEMT GaAs SP3T Switch

Applications • 802.11 a/b/g/n WLAN networks • For devices that support Bluetooth® signals Features • Positive low voltage control: 0/1.8 to 5.0 V • Low insertion loss: 0.5 dB @ 2.5 GHz, 0.9 dB @ 6 GHz • High isolation: 25 dB up to 6 GHz • Excellent linearity performance: P1dB = +29 dBm •

PHEMT GaAs IC High-Power 4-CTL DPDT Switch LF - 6 GHz

Description Skyworks SKY13318-321LF is a broadband DPDT switch designed to combine T/R and antenna diversity switching functions on a single IC. The device is designed to handle high power and maintain high linearity at low control voltages. This-low cost switch is ideal for Wi-Fi systems and is

0.1-3.0 GHz GaAs SPDT Switch

Description The SKY13319-374LF is a pHEMT GaAs FET I/C high power switch. The switch is an ideal choice for two-way radios, WiMAX, and WLAN applications where low loss, high isolation, and excellent linearity are key requirements. Features • Broadband frequency range: 0.1-3.0 GHz • Low inserti

0.1-6.0 GHz GaAs SPDT Switch

Description The SKY13320-374LF is a pHEMT GaAs FET I/C high power switch. The switch is an ideal choice for two-way radios, WiMAX, and WLAN applications such as 802.11 a/b/g where low loss, high isolation, and excellent linearity are key requirements. Features • Broadband frequency range: 0.1-6

20 MHz to 6.0 GHz GaAs SPDT Switch

Features  Positive voltage control (0 and 1.8 V to 0 and 5.0 V)  Broadband frequency range: 20 MHz to 6.0 GHz  Very low insertion loss, 0.35 dB typical @ 2.45 GHz  High isolation, 24 dB typical @ 2.45 GHz  Excellent linearity performance, IP0.5dB = +30 dBm  Ultra-miniature, MLPD (6-pin

20 MHz to 6.0 GHz GaAs SPDT Switch

Features  Positive voltage control (0 and 1.8 V to 0 and 5.0 V)  Broadband frequency range: 20 MHz to 6.0 GHz  Very low insertion loss, 0.35 dB typical @ 2.45 GHz  High isolation, 24 dB typical @ 2.45 GHz  Excellent linearity performance, IP0.5dB = +30 dBm  Ultra-miniature, MLPD (6-pin

0.1-6.0 GHz DPDT Switch

Features • Broadband frequency range: 0.1 to 6.0 GHz • Positive control voltage range: 1.8 to 5.0 V • Low insertion loss: 0.6 dB typical @ 2.5 GHz • High isolation: 23.5 dB typical @ 2.5 GHz • P1dB: +33 dBm typical @ 3 V • Small, MLPD (6-pin, 1.5 x 1.5 mm) Pb-free package (MSL1, 260 °C per J