Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

· 75 lower Eoff compared to previous generation combined with low conduction losses · Short circuit withstand time – 10 ms · Designed for: - Motor controls - Inverter · NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable be

HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ● 75 lower Eoff compared to previous generation combined with low conduction losses ● Short circuit withstand time – 10 μs ● Designed for:    - Motor controls    - Inverter ● NPT-Technology for 600V a

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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N-Channel 6 50V (D-S) Power MOSFET

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N-Channel 650V (D-S) Power MOSFET

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10A 600V N-channel Enhancement Mode Power MOSFET

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