Superfast NPT-IGBT Module

Features • N channel, homogeneous Silicon structure (NPT - Non punch through IGBT) • Low tail current with low temperature dependence • High short circuit capability, self limiting if term. G is clamped to E • Pos. temp.-coeff. of VCEsat • Very low Cies, Coes, Cres • Latch-up free • Fast &a

Trench IGBT Modules

Features*  VCE(sat) with positive temperature coefficient  High short circuit capability, self limiting to 6 x ICnom  Fast & soft switching inverse CAL diodes  Insulated copper baseplate using DCB Technology (Direct Copper Bonding)  With integrated gate resistor

SEMITRANS IGBT Modules New Range

SEMITRANS® IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower VCEsat, soft and fast CAL diodes1); Preliminary Data 4)

Ultra Fast IGBT Module

Features • N channel, homogeneous Si • Low inductance case • Short tail current with low temperature dependence • High short circuit capability, self limiting to 6 * Icnom • Fast & soft inverse CAL diodes • Isolated copper baseplate using DCB Direct Copper Bonding Technology • Large cle

High Speed IGBT4 Modules

Features* • High speed trench and field-stop IGBT • CAL4 ultra-fast = soft switching 4. generation CAL-diode • Insulated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • For higher switching frequencies above 15kHz • UL recognized, file n

IGBT M7 Modules

Features* • VCE(sat) with positive temperature coefficient • High overload capability • Low loss high density IGBT´s • Fast & soft switching inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Insulated copper baseplate using DBC Technology (Direct Bonded Copper

IGBT4 Modules

Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting to 6 x ICNOM • Soft switching 4. Generation CAL diode (CAL4) Typical Applications • AC inverter drives • UPS • Electronic welders at fsw up to 20 kHz

IGBT4 Modules

Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting to 6 x ICNOM • Soft switching 4. Generation CAL diode (CAL4) Typical Applications • AC inverter drives • UPS • Electronic welders at fsw up to 20 kHz

Target Data

Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switchi

SEMITRANS IGBT Modules New Range

SEMITRANS® IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower VCEsat, soft and fast CAL diodes1); Preliminary Data 4)

IGBT Modules

Features • N channel, homogeneous Si • Very low tail current with low temperature dependence • High short circuit capability, self limiting to 6 * Icnom • Latch-up free • Fast & soft inverse CAL diodes • Isolated copper baseplate using DCB Direct Copper Bonding • Large clearance (10 mm)

SEMITRANS IGBT Modules New Range

SEMITRANS® IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower VCEsat, soft and fast CAL diodes1); Preliminary Data 4)

Trench IGBT Modules

Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Ic Typical Applications* • AC inverter drives mains 575 - 750 V AC • Public transport (auxiliary syst.)

Trench IGBT Modules

Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Ic Typical Applications* • AC inverter drives mains 575 - 750 V AC • Public transport (auxiliary syst.)

西门康IGBT模块 SKM100GB063D

文件：623.008 Kbytes Page：4 Pages

西门康IGBT模块 SKM100GB123D

文件：112.633 Kbytes Page：1 Pages

西门康IGBT模块 SKM100GB125DN

文件：128.113 Kbytes Page：6 Pages

西门康IGBT模块 SKM100GB128D

文件：812.868 Kbytes Page：6 Pages

西门康IGBT模块 SKM100GB12T4

文件：462.307 Kbytes Page：5 Pages

西门康IGBT模块 SKM100GB12V

文件：323.373 Kbytes Page：0 Pages

西门康IGBT模块 SKM100GB173D

文件：580.828 Kbytes Page：4 Pages

Superfast NPT-IGBT Module

文件：807.64 Kbytes Page：6 Pages

IGBT模块

IGBT Modules

文件：566.35 Kbytes Page：6 Pages

IGBT Modules

文件：559.69 Kbytes Page：4 Pages

IGBT Modules

文件：566.35 Kbytes Page：6 Pages

Low Loss IGBT Module

文件：541.45 Kbytes Page：4 Pages

Low Loss IGBT Module

IGBT模块

SEMITRANSR M Ultra Fast IGBT Modules

文件：121.88 Kbytes Page：6 Pages

Ultra Fast IGBT Module

文件：641.43 Kbytes Page：6 Pages

SPT IGBT Module

文件：793.23 Kbytes Page：6 Pages

SPT IGBT Module

文件：654.38 Kbytes Page：4 Pages

Fast IGBT4 Modules

文件：485.51 Kbytes Page：5 Pages

Fast IGBT4 Modules

文件：485.51 Kbytes Page：5 Pages

Fast IGBT4 Modules

文件：403.67 Kbytes Page：5 Pages

Fast IGBT4 Modules

文件：403.67 Kbytes Page：5 Pages

SEMITRANS

文件：391.16 Kbytes Page：5 Pages

SEMITRANS

文件：391.16 Kbytes Page：5 Pages

IGBT Modules

文件：566.64 Kbytes Page：4 Pages

Trench IGBT Modules

文件：949.67 Kbytes Page：6 Pages

Trench IGBT Modules

文件：801.31 Kbytes Page：6 Pages

Trench IGBT Modules

文件：801.31 Kbytes Page：6 Pages

Trench IGBT Modules

文件：949.67 Kbytes Page：6 Pages

IGBT4 Modules

文件：446.82 Kbytes Page：5 Pages

1.3 Watts Axial Leaded Zener Diodes

VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

100/200

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TOGGLE SWITCHES - MINIATURE

文件：1.55809 Mbytes Page：10 Pages