| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MOSFET650V,4AN-CHANNEL FEATURE •RDS(ON),typ.=2.1Ω@VGS=10V •HighCurrentRating •LowerCapacitance •LowerTotalGateChargeMinimizeSwitchingLoss •FastRecoveryBodyDiode DESCRIPTION TheAM04N65isavailableinTO220FPackage. APPLICATION •Adaptor •Charger •SMPSStandbyPower | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 |  |   | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,3.2A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-Channel650V(D-S)MOSFET 文件：1.97664 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
M/A-COM |
23+ |
LGA10 |
8000 |
全新原装现货,欢迎来电咨询 |
|||
M/A-COM |
2016+ |
LGA10 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
MA/COM |
21+ |
LGA10 |
970 |
原装现货假一赔十 |
|||
MA/COM |
23+ |
LGA10 |
970 |
原装正品,假一罚十! |
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MA/COM |
LGA10 |
970 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
||||
MA/COM |
2019 |
LGA10 |
55000 |
进口原装现货一定自己库存 |
|||
M/A-COM |
2016+ |
LGA10 |
6523 |
只做进口原装现货!假一赔十! |
|||
M/A-COM |
22+ |
LGA10 |
2650 |
原装优势!绝对公司现货 |
|||
M/A-COM |
LGA10 |
265209 |
假一罚十原包原标签常备现货! |
||||
AAC |
23+ |
SMD |
57100 |
原厂原装正品 |
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SKD04N65F数据表相关新闻
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2020-11-27SKBC3510
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2020-9-9SKIIP39ANB16V1
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2019-8-7
DdatasheetPDF页码索引
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