High Speed IGBT in NPT-technology

• 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution

High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

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分立式IGBT

High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

文件：1.18748 Mbytes Page：14 Pages

15 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pu

N-Channel 650V (D-S) Power MOSFET

文件：1.0671 Mbytes Page：9 Pages

15A, 600V N-CHANNEL POWER MOSFET

文件：185.37 Kbytes Page：6 Pages

High Switching Speed

文件：49.33 Kbytes Page：2 Pages

CoolMOS Power Transistor

文件：543.38 Kbytes Page：12 Pages