Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ● 75 lower Eoff compared to previous generation combined with low conduction losses ● Short circuit withstand time – 10 μs ● Designed for:    - Motor controls    - Inverter ● NPT-Technology for 600V a

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：1.1487 Mbytes Page：13 Pages

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：1.1487 Mbytes Page：13 Pages

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

N-Channel 6 50V (D-S) Power MOSFET

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N-Channel 650V (D-S) Power MOSFET

文件：2.33382 Mbytes Page：11 Pages

10A 600V N-channel Enhancement Mode Power MOSFET

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10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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