Bipolar Transistors

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Trans GP BJT PNP 80V 1A

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 6-lead, SOT119 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to t

PROGRAMMABLE QUAD BIPOLAR OPERATIONAL AMPLIFIERS

DESCRIPTION The LM346 consists of four independent, high gain, internally compensated, low power programmable amplifiers. Two external resistors (Rset) allow the user to program the gain-bandwith product, slew rate, supply current, input bias current, input offset current and input noise. For exa

PROGRAMMABLE QUAD BIPOLAR OPERATIONAL AMPLIFIERS

DESCRIPTION The LM346 consists of four independent, high gain, internally compensated, low power programmable amplifiers. Two external resistors (Rset) allow the user to program the gain-bandwith product, slew rate, supply current, input bias current, input offset current and input noise. For exa

Programmable Quad Operational Amplifiers

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Programmable Quad Operational Amplifiers

文件：727.78 Kbytes Page：17 Pages

C8051F35X DELTA-SIGMA ADC USER鈥橲 GUIDE

Integrated Circuit AM-RF Amp, Mix/OSC, FM-AM IF Amp