10.0 Ampere Surface Mount Round Lead Schottky Barrier Rectifier Diodes

FEATURE ◆ Standard MBR matured technology with high reliablity ◆ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ◆ For surface mounted applications ◆ Low reverse leakage ◆ Built-in strain relief,ideal for automated placement ◆ High forward surge current

肖特基二极管

10.0 Ampere Surface Mount Round Lead Schottky Barrier Rectifier Diodes

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SCHOTTKY BARRIER RECTIFIERS

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • For through hole applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in low voltage high frequency inverters, free wheeling, a

Schottky Barrier Rectifier

FEATURES · Low Forward Voltage Drop · High Frequency Operation · Small Foot Print, Surface Mountable APPLICATIONS · Switching Power Supplies · Converters · Battery Charging

SCHOTTKY BARRIER RECTIFIERS

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • For through hole applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in low voltage high frequency inverters, free wheeling, a

SCHOTTKY RECTIFIER

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肖特基二极管 Schottky Barrier Diodes

Surface Mount Schottky Rectifiers

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丝印代码：D-PAK；Surface Mount Schottky Rectifiers

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SCHOTTKY RECTIFIER

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SCHOTTKY RECTIFIER

Surface Mount Schottky Rectifiers

文件：2.57584 Mbytes Page：3 Pages

丝印代码：I-PAK；Surface Mount Schottky Rectifiers

文件：2.33203 Mbytes Page：3 Pages

Photo Interrupters

Photo Interrupters Overview CNA1015 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

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2 x 12 W hi-fi audio power amplifier