Silicon Schottky Barrier Diode

Description TheSJPA-D3isa30V,1.0ASchottkydiodewithallowingimprovementsinVFcharacteristic. Thecharacteristicfeaturecontributestoimprovingpowersupplyefficiencyandtoenablinghigh-frequencysystems. Features ●VRSM----------------------------------------------------30V

Silicon Diode

Description TheSJPD-D5isafastrecoverydiodeof500V/1.0A.Themaximumtrrof40nsisrealizedbyoptimizingalifetimecontrol. Features ●VRM----------------------------------------------------500V ●IF(AV)----------------------------------------------------1.0A ●VF-----------

Silicon Diode

Description TheSJPD-L5isafastrecoverydiodeof500V/3.0A.Themaximumtrrof50nsisrealizedbyoptimizingalifetimecontrol. Features ●VRM----------------------------------------------------500V ●IF(AV)----------------------------------------------------3.0A ●VF-----------

Silicon Schottky Barrier Diode

Description TheSJPE-H4isa40V,2.0ASchottkydiodewithallowingimprovementsinVFandIRcharacteristics. Thesecharacteristicfeaturescontributetoimprovingpowersupplyefficiencyandtoenablinghigh-frequencysystems. Features ●VRSM-----------------------------------------------

Silicon Diode

Description TheSJPL-D2isafastrecoverydiodeof200V/1.0A.Themaximumtrrof50nsisrealizedbyoptimizingalife-timecontrol. Features ●VRM----------------------------------------------------200V ●IF(AV)----------------------------------------------------1.0A ●VF---------

Silicon Diode

Description TheSJPL-F4isafastrecoverydiodeof400V/1.5A.Themaximumtrrof50nsisrealizedbyoptimizingalife-timecontrol. Features ●VRM----------------------------------------------------400V ●IF(AV)----------------------------------------------------1.5A ●VF---------

Silicon Diode

Description TheSJPL-H2isafastrecoverydiodeof200V/2.0A.Themaximumtrrof50nsisrealizedbyoptimizingalife-timecontrol. Features ●VRM----------------------------------------------------200V ●IF(AV)----------------------------------------------------2.0A ●VF---------

Silicon Diode

Description TheSJPL-H6isafastrecoverydiodeof600V/2.0A.Themaximumtrrof50nsisrealizedbyoptimizingalife-timecontrol. Features ●VRM----------------------------------------------------600V ●IF(AV)----------------------------------------------------2.0A ●VF---------

Fast Recovery Diode

Description TheSJPL-L2isafastrecoverydiodeof200V/3.0A.Themaximumtrrof50nsisrealizedbyoptimizingalife-timecontrol. Features ●VRM----------------------------------------------------200V ●IF(AV)----------------------------------------------------3.0A ●VF---------

Silicon Diode

Description TheSJPL-L4isafastrecoverydiodeof400V/3.0A.Themaximumtrrof50nsisrealizedbyoptimizingalife-timecontrol. Features ●VRM----------------------------------------------------400V ●IF(AV)----------------------------------------------------3.0A ●VF---------

Silicon Diode

Description TheSJPM-H4isa400V,2.0Ageneral-purposerectifierdiodewithlowlosscharacteristics.Thisrectifierdiodeisforacommercialpowersupply. Features ●VRSM--------------------------------------------------400V ●IF(AV)----------------------------------------------------

Silicon Diode

Description TheSJPX-F2isafastrecoverydiodeof200V/1.5A.Themaximumtrrof30nsisrealizedbyoptimizingalife-timecontrol. Features ●VRM----------------------------------------------------200V ●IF(AV)----------------------------------------------------1.5A ●VF---------

Silicon Diode

Description TheSJPX-H3isafastrecoverydiodeof300V/2.0A.Themaximumtrrof30nsisrealizedbyoptimizingalife-timecontrol. Features ●VRM----------------------------------------------------300V ●IF(AV)----------------------------------------------------2.0A ●VF---------

Silicon Diode

Description TheSJPX-H6isafastrecoverydiodeof600V/2.0A.Themaximumtrrof30nsisrealizedbyoptimizingalife-timecontrol. Features ●VRM----------------------------------------------------600V ●IF(AV)----------------------------------------------------2.0A ●VF---------

Silicon Diode

Description TheSJPZ-E20isapowerZenerdiodedesignedfortheprotectionofautomotiveelectronicunits,especiallyfromthesurgegeneratedduringloaddumpconditionsandvoltagetransientsinducedbyinductiveloads. Features ●VZ---------------------------------------------25Vto31V

Silicon Diode

Scope ThepresentspecificationsshallapplytoanSJPZ-E33. Outline TypeSiliconDiode StructureResinMolded ApplicationsOverVoltageAbsorption Flammability UL94V-0(Equivalent)

Silicon Diode

Description TheSJPZ-K28isapowerZenerdiodedesignedfortheprotectionofautomotiveelectronicunits,especiallyfromthesurgegeneratedduringloaddumpconditionsandvoltagetransientsinducedbyinductiveloads. Features ●VZ---------------------------------------------25Vto31V

Silicon Diode

Description TheSJPZ-NseriesarepowerZenerdiodesdesignedfortheprotectionofautomotiveelectronicunits,especiallyfromthesurgegeneratedduringloaddumpconditionsandvoltagetransientsinducedbyinductiveloads.ThepackageoftheIChashighdissipationandhighsurgecapability.

Silicon Diode

Description TheSJPZ-NseriesarepowerZenerdiodesdesignedfortheprotectionofautomotiveelectronicunits,especiallyfromthesurgegeneratedduringloaddumpconditionsandvoltagetransientsinducedbyinductiveloads.ThepackageoftheIChashighdissipationandhighsurgecapability.

Silicon Diode

Description TheSJPZ-NseriesarepowerZenerdiodesdesignedfortheprotectionofautomotiveelectronicunits,especiallyfromthesurgegeneratedduringloaddumpconditionsandvoltagetransientsinducedbyinductiveloads.ThepackageoftheIChashighdissipationandhighsurgecapability.

Silicon Diode

Description TheSJPZ-NseriesarepowerZenerdiodesdesignedfortheprotectionofautomotiveelectronicunits,especiallyfromthesurgegeneratedduringloaddumpconditionsandvoltagetransientsinducedbyinductiveloads.ThepackageoftheIChashighdissipationandhighsurgecapability.

包装：盒 描述：CONN SCKT BLOCK SZ16 1.020\ 连接器，互连器件 端子接线系统

包装：盒 描述：CONN SCKT BLOCK SZ20 0.675\ 连接器，互连器件 端子接线系统

The present specifications shall apply to an SJPA-D3.

文件：128.88 Kbytes Page：5 Pages

Schottky Diode

文件：253.03 Kbytes Page：6 Pages

Schottky Diode

文件：252.36 Kbytes Page：6 Pages

The present specifications shall apply to an SJPA-L3.

文件：272.26 Kbytes Page：5 Pages

Schottky Barrier Rectifier

文件：187.51 Kbytes Page：4 Pages

SJPB-D4 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal.

文件：229.93 Kbytes Page：5 Pages

Schottky Barrier Rectifier

文件：187.12 Kbytes Page：4 Pages

SJPB-D6 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal.

文件：237.63 Kbytes Page：5 Pages

Schottky Barrier Rectifier

文件：189.24 Kbytes Page：4 Pages

Schottky Barrier Rectifier

文件：165.98 Kbytes Page：4 Pages

Schottky Barrier Rectifier

文件：188.2 Kbytes Page：4 Pages

Schottky Barrier Rectifier

文件：188.32 Kbytes Page：4 Pages

Schottky Barrier Rectifier

文件：164.94 Kbytes Page：4 Pages

SJPB-L4 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal.

文件：236.13 Kbytes Page：5 Pages

Schottky Barrier Rectifier

文件：71.18 Kbytes Page：4 Pages

SJPB-H6 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal.

文件：71.59 Kbytes Page：4 Pages

The present specifications shall apply to an SJPE-H4.

文件：196.89 Kbytes Page：5 Pages

Schottky Barrier Rectifier

文件：185.46 Kbytes Page：4 Pages

Schottky Barrier Rectifier

文件：182.26 Kbytes Page：4 Pages

Schottky Barrier Rectifier

文件：174.42 Kbytes Page：4 Pages

SJPJ-L3 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal.

文件：245.62 Kbytes Page：5 Pages

The present specifications shall apply to an SJPL-H6.

文件：144.59 Kbytes Page：4 Pages

SJPL-L4 realizes low leakage current at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature.

文件：226.33 Kbytes Page：5 Pages

Schottky Diode

文件：255 Kbytes Page：6 Pages

Schottky Diode

文件：261.779 Kbytes Page：6 Pages

SJPX-F2 has the characteristics of low VF and superior trr at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature.

文件：242.44 Kbytes Page：5 Pages

SJPX-H3 has the characteristics of low VF and superior trr at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature.

文件：244.78 Kbytes Page：5 Pages

SJPX-H6 has the characteristics of low VF and superior trr at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature.

文件：232.41 Kbytes Page：5 Pages