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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  |   | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,4A,RDS(ON)=2.4W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,4A,RDS(ON)=2.4Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
PowerMOSFET 文件：1.9873 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
|||
CET/華瑞 |
SOT-263 |
265209 |
假一罚十原包原标签常备现货! |
||||
CET |
2020+ |
TO-263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
CET |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
CET |
05+ |
TO-263 |
40000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CET/華瑞 |
2022+ |
TO-263 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
CETSEMICO |
21+ |
35200 |
一级代理/放心采购 |
||||
CET |
23+ |
TO-263 |
12800 |
公司只有原装 欢迎来电咨询。 |
|||
CET/華瑞 |
21+ROHS |
TO-263 |
122999 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
C |
23+ |
T0-263 |
10000 |
公司只做原装正品 |
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2019-10-18
DdatasheetPDF页码索引
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