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SIR价格
参考价格：￥0.0000
型号：SIR-10CH 品牌：Russell 备注：这里有SIR多少钱，2024年最近7天走势，今日出价，今日竞价，SIR批发/采购报价，SIR行情走势销售排行榜，SIR报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SIR | Solid-State Relay - Isolated Description TheSIRSeriesisdesignedforindustrialapplicationsrequiring ruggedreliableoperation.Providesanopticallyisolated,high capacity,solid-stateoutput,withpowerswitchingcapabilityup to20Asteadystate,200Ainrush.ZerovoltageswitchingSIR2 extendsthelifeofanin | LittelfuseLittelfuse Inc. 力特富斯（Littelfuse）力特公司 |  |   |
N-Channel 100 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技威世科技半导体 |  | | |
N-Channel 40 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •100RgandUIStested •Qgd/Qgsratio | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 80 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
P-Channel 30 V (D-S) MOSFET FEATURES •TrenchFET®GenIVp-channelpowerMOSFET •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Adapterswitch •Loadswitch •Motordrivecontrol •Batterymanagement •Motordrivecontrol | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
P-Channel 30 V (D-S) MOSFET FEATURES •TrenchFET®GenIVp-channelpowerMOSFET •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Adapterswitch •Loadswitch •Motordrivecontrol •Batterymanagement •Motordrivecontrol | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 30 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •HighpowerdensityDC/DC •VRMsandembeddedDC/DC | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 20 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •LeadershipRDS(ON)minimizespowerloss fromconduction •2.5Vratingsandoperationatlowvoltage gatedrive •100RgandUIStested •Materialcategorization:fordefinitionsofcompliance pleasese | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 60 V (D-S) MOSFETs FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDS-Qgfigure-of-merit(FOM) •TunedforthelowestRDS-QossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 60 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 60 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDS-Qgfigureofmerit(FOM) •TunedforthelowestRDS-QossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 60 V (D-S) MOSFETs FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Solid-State Relay - Isolated Description TheSIRSeriesisdesignedforindustrialapplicationsrequiring ruggedreliableoperation.Providesanopticallyisolated,high capacity,solid-stateoutput,withpowerswitchingcapabilityup to20Asteadystate,200Ainrush.ZerovoltageswitchingSIR2 extendsthelifeofanin | LittelfuseLittelfuse Inc. 力特富斯（Littelfuse）力特公司 | | | |
Solid-State Relay - Isolated Description TheSIRSeriesisdesignedforindustrialapplicationsrequiring ruggedreliableoperation.Providesanopticallyisolated,high capacity,solid-stateoutput,withpowerswitchingcapabilityup to20Asteadystate,200Ainrush.ZerovoltageswitchingSIR2 extendsthelifeofanin | LittelfuseLittelfuse Inc. 力特富斯（Littelfuse）力特公司 | | | |
Solid-State Relay - Isolated Description TheSIRSeriesisdesignedforindustrialapplicationsrequiring ruggedreliableoperation.Providesanopticallyisolated,high capacity,solid-stateoutput,withpowerswitchingcapabilityup to20Asteadystate,200Ainrush.ZerovoltageswitchingSIR2 extendsthelifeofanin | LittelfuseLittelfuse Inc. 力特富斯（Littelfuse）力特公司 | | | |
Solid-State Relay - Isolated Description TheSIRSeriesisdesignedforindustrialapplicationsrequiring ruggedreliableoperation.Providesanopticallyisolated,high capacity,solid-stateoutput,withpowerswitchingcapabilityup to20Asteadystate,200Ainrush.ZerovoltageswitchingSIR2 extendsthelifeofanin | LittelfuseLittelfuse Inc. 力特富斯（Littelfuse）力特公司 | | | |
Solid-State Relay - Isolated Description TheSIRSeriesisdesignedforindustrialapplicationsrequiring ruggedreliableoperation.Providesanopticallyisolated,high capacity,solid-stateoutput,withpowerswitchingcapabilityup to20Asteadystate,200Ainrush.ZerovoltageswitchingSIR2 extendsthelifeofanin | LittelfuseLittelfuse Inc. 力特富斯（Littelfuse）力特公司 | | | |
Solid-State Relay - Isolated Description TheSIRSeriesisdesignedforindustrialapplicationsrequiring ruggedreliableoperation.Providesanopticallyisolated,high capacity,solid-stateoutput,withpowerswitchingcapabilityup to20Asteadystate,200Ainrush.ZerovoltageswitchingSIR2 extendsthelifeofanin | LittelfuseLittelfuse Inc. 力特富斯（Littelfuse）力特公司 | | | |
Solid-State Relay - Isolated Description TheSIRSeriesisdesignedforindustrialapplicationsrequiring ruggedreliableoperation.Providesanopticallyisolated,high capacity,solid-stateoutput,withpowerswitchingcapabilityup to20Asteadystate,200Ainrush.ZerovoltageswitchingSIR2 extendsthelifeofanin | LittelfuseLittelfuse Inc. 力特富斯（Littelfuse）力特公司 | | | |
Infrared light emitting diode, top view type TheSIR-320ST3FisaGaAsinfraredlightemittingdiodehousedinclearplastic.Thisdevicehasahighluminousefficiencyanda940nmspectrumsuitableforsilicondetectors.Itissmallandatthesametimehasawideradiationangle,markingitidealforcompactopticalcontrolequipment. Fea | ROHMRohm Semiconductor 罗姆罗姆半导体集团 |  | | |
Infrared light emitting diode, top view type TheSIR-341ST3FisaGaAsinfraredlightemittingdiodehousedinclearplastic. Thisdevicehasahighluminousefficiencyanda940nmpeakwavelengthsuitableforsilicondetectors. Itissmallandatthesametimehasawideradiationangle,markingitidealforcompactopticalcontrolequipm | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
Infrared light emitting diode, top view type TheSIR-34ST3FisaGaAsinfraredlightemittingdiodehousedinclearplastic.Thisdevicehasahighluminousefficiencyanda950nmspectrumsuitableforsilicondetectors.Itissmallandatthesametimehasawideradiationangle,markingitidealforcompactopticalcontrolequipment. Feat | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
N-Channel 30-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •100UISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SynchronousRectification •DC/DCPoint-of-Load •Server | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 30-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •100UISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SynchronousRectification •DC/DCPoint-of-Load •Server | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
P-Channel 30 V (D-S) MOSFET FEATURES •ExtendedVGSrange(±25V)foradaptor switchapplications •ExtremelylowRDS(on) •TrenchFET®powerMOSFET •100RgandUIStested •TypicalESDperformance:4000V(HBM) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICAT | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
P-Channel 30 V (D-S) MOSFET FEATURES •ExtendedVGSrange(±25V)foradaptor switchapplications •ExtremelylowRDS(on) •TrenchFET®powerMOSFET •100RgandUIStested •TypicalESDperformance:4000V(HBM) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICAT | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 20 V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •DC/DCconverter -Notebook -POL | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 20 V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •DC/DCconverter -Notebook -POL | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 40 V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •SecondarysideDC/DC | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 40-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •QgOptimized •100RgTested •100UISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConversion •Industrial | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 40-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •QgOptimized •100RgTested •100UISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConversion •Industrial | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 45 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •45VDrain-sourcebreak-downvoltage •TunedforlowQgandQoss •100RgandUIStested •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Highpowerdensit | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 60 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 60 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDS-Qgfigure-of-merit(FOM) •TunedforthelowestRDS-QossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 60 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 60 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •TunedforthelowestRDS-QossFOM •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Primarysideswitch •Synchronousrectification •DC/DCconverter •Moto | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 60 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDS-Qgfigure-of-merit(FOM) •TunedforthelowestRDS-QossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 60 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 30 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •100RgandUIStested •Optimizedforhigh-sideswitchinginsynchronousbuckconverters •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •DC/DCconversion •Batteryprotec | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 30-V (D-S) MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •LowThermalResistancePowerPAK®PackagewithLow1.07mmProfile •OptimizedforHigh-SideSynchronousRectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Infrared light emitting diode, top view type TheSIR-505STA47isoptimalfortape-endsensorsinVTR’sandotherequipment.Itcanbedirectlymountedonaprintedcircuitboard. Features 1)φ5mmplasticpackage. 2)Direct-mounttype. 3)Longlifeandhighreliability. Applications VCR’s,Opticalcontrolequipment | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
N-Channel 100 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 100 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 100 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 100 V (D-S) MOSFETs FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 100 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Infrared light emitting diode, top view type TheSIR-563ST3FisaGaAsinfraredlightemittingdiodehousedinclearplastic. Thisdevicehasahighluminousefficiencyanda940nmpeakwavelengthsuitableforsilicondetectors. Ithasawideradiationangleandisidealforcompactopticalcontrolequipment. Features 1)Highefficiency, | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
Infrared light emitting diode, top view type Infraredlightemittingdiode,topviewtype TheSIR-568ST3Fhastheresponsespeedandluminousoutputnecessaryforimagetransmissioninaudio-visualapplications.Itcansupportalmostalltypesofopticaltransmissionthroughair,includingaudioanddatatransmission.Theluminousoutput | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
Infrared light emitting diode, top view type Infraredlightemittingdiode,topviewtype TheSIR-568ST3Fhastheresponsespeedandluminousoutputnecessaryforimagetransmissioninaudio-visualapplications.Itcansupportalmostalltypesofopticaltransmissionthroughair,includingaudioanddatatransmission.Theluminousoutput | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
Infrared light emitting diode, top view type TheSIR-56ST3FisaGaAsinfraredlightemittingdiodehousedinclearplastic.Thisdevicehasahighluminousefficiencyanda950nmspectrumsuitableforsilicondetectors.Lowcostmakeitanideallightsourceforhouseholdremotecontroldevices. Features 1)Highefficiency,highoutputPO | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
Infrared light emitting diode, top view type TheSIR-56ST3FisaGaAsinfraredlightemittingdiodehousedinclearplastic.Thisdevicehasahighluminousefficiencyanda950nmspectrumsuitableforsilicondetectors.Lowcostmakeitanideallightsourceforhouseholdremotecontroldevices. Features 1)Highefficiency,highoutputPO | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
N-Channel 150 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 150 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 150 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 150 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDS-Qgfigureofmerit(FOM) •TunedforthelowestRDS-QossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Primarysideswitch •DC/DCconve | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 150 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 150 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 150 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 150 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel 80 V (D-S) MOSFET FEATURES •TrenchFET®GenVpowerMOSFET •Ultra-lowRDSxQgFOMproduct •OptimizedQgd/Qgsratio •Excellentefficiencyperformancein powersupplies •100RgandUIStested •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS • | VishayVishay Siliconix 威世科技威世科技半导体 | | |
SIR产品属性
- 类型
描述
- 型号
SIR
- 制造商
Samtec Inc
- 功能描述
ONE PIECE POWER RIGHT ANGLE ASSEMBLY - Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
21+ |
PowerPAKSO-8 |
10000 |
原装现货假一罚十 |
|||
VISHAY/威世 |
23+ |
QFN-8 |
76000 |
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13 |
|||
VISHAY(威世) |
23+ |
QFN-8 |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
SILICONIXVISHAY |
21+ |
NA |
6000 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
MATRIXINDUSTRIES |
24+ |
PowerPAKSO-8 |
157545 |
明嘉莱只做原装正品现货 |
|||
VISHAY |
23+ |
QFN8 |
7250 |
原装现货 欢迎询价 |
|||
VISHAY |
21+ |
PAKSO-8 |
6000 |
||||
VISHAY |
2216+ |
QFN |
8446 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
VISHAY |
21+ |
QFN |
447 |
全新原装,支持实单,假一罚十,德创芯微 |
|||
原厂原包 |
2022+ |
原装 |
78000 |
原装进口现货,工厂客户可以放款。17377264928微信同 |
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DdatasheetPDF页码索引
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