N-Channel 40 V (D-S) 175 째C MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Fully lead (Pb)-free device • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • Up to 200 A maximum continuous drain current • 50 smaller footprint than D2PAK / TO-263 • 100 Rg and UIS tested • Material categorization:

N-Channel 40 V (D-S) 175 °C MOSFET

文件：199.89 Kbytes Page：7 Pages

N-Channel 40 V (D-S) 175 °C MOSFET

N-Channel 40 V (D-S) 175 째C MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Fully lead (Pb)-free device • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • Up to 200 A maximum continuous drain current • 50 smaller footprint than D2PAK / TO-263 • 100 Rg and UIS tested • Material categorization:

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