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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHLZ14 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati | VishayVishay Siliconix 威世科技威世科技半导体 |   | |
SIHLZ14 | Power MOSFET 文件：1.08982 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
SIHLZ14 | Power MOSFET 文件：1.08982 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
SIHLZ14 | Power MOSFET 文件：1.04322 Mbytes Page：9 Pages | TFUNK 威世 | | |
SIHLZ14 | Power MOSFET 文件：1.16541 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET FEATURES • Advanced process technology • Surface-mount • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or par | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：1.16541 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：1.08982 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：1.16541 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：317.61 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：316.45 Kbytes Page：9 Pages | TFUNK 威世 | | ||
Power MOSFET 文件：317.61 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：317.61 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：396.23 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：317.61 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：317.61 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：396.23 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：317.61 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：317.61 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：396.23 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：317.61 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：396.23 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |
SIHLZ14产品属性
- 类型
描述
- 型号
SIHLZ14
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
32500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
VISHAY/威世 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
Vishay |
20+ |
D2PAK(TO-263) |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY/威世 |
2022+ |
TO-220 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
VISHAY/威世 |
23+ |
TO-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VIS |
23+ |
TO-220 |
10000 |
原装正品,假一罚十 |
|||
VISHAY/威世 |
20+ |
TO-220 |
7500 |
现货很近!原厂很远!只做原装 |
|||
Vishay |
25+ |
D2PAK(TO- |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VISHAY/威世 |
2022+ |
TO-220 |
50000 |
原厂代理 终端免费提供样品 |
|||
VISHAY/威世 |
24+ |
D2PAK(TO-263) |
60000 |
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DdatasheetPDF页码索引
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