位置：首页 > IC中文资料第11362页 > SIHLR120TR-E3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHLR120TR-E3 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VISHAYVishay Siliconix 威世威世科技公司 |   | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
IRFR120 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VISHAYVishay Siliconix 威世威世科技公司 | |
SIHLR120TR-E3产品属性
- 类型
描述
- 型号
SIHLR120TR-E3
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FUJI |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
SIAI |
24+ |
DFN3X3-8L |
9000000 |
一级代理/放心采购 |
|||
SAMSUNG |
22+ |
SIL-10 |
3000 |
原装正品,支持实单 |
|||
SAM |
25+ |
DIP-28 |
394 |
全新原装正品支持含税 |
|||
24+ |
850 |
真实现货库存 |
|||||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
SAMSU |
25+ |
SOP3.9 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
SAMSUNG |
2024+ |
DIP |
50000 |
原装现货 |
|||
SAMSUNG/三星 |
23+ |
SIL-10 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
SAMSUNG/三星 |
2022+ |
420 |
全新原装 货期两周 |
SIHLR120TR-E3芯片相关品牌
SIHLR120TR-E3规格书下载地址
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SIHLR120TR-E3数据表相关新闻
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2020-4-4
DdatasheetPDF页码索引
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