Power MOSFET

VDS (V) 200 RDS(on) (Ω) VGS = 5.0 V 0.80 Qg (Max.) (nC) 16 Qgs (nC) 2.7 Qgd (nC) 9.6 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivene

Power MOSFET

文件：2.20214 Mbytes Page：9 Pages

Power MOSFET

文件：2.20053 Mbytes Page：9 Pages

Power MOSFET

Power MOSFET

VDS (V) 200 RDS(on) (Ω) VGS = 5.0 V 0.80 Qg (Max.) (nC) 16 Qgs (nC) 2.7 Qgd (nC) 9.6 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivene

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note

Power MOSFET

文件：2.20053 Mbytes Page：9 Pages

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文件：1.47104 Mbytes Page：10 Pages

Power MOSFET

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