Isolated Delta-Sigma Modulator for Current Shunt Measurement

KEY FEATURES • Low voltage differential input • ±62.5 mV and ±250 mV options • Modulator clock options • External clock up to 25 MHz (Si8941) • 10 MHz internal clock (Si8946) • 20 MHz internal clock (Si8947) • Typical input offset: ±50 μV • Typical gain error: ±0.05 • Excellent drift spe

Isolated Delta-Sigma Modulator for Current Shunt Measurement

KEY FEATURES • Low voltage differential input • ±62.5 mV and ±250 mV options • Modulator clock options • External clock up to 25 MHz (Si8941) • 10 MHz internal clock (Si8946) • 20 MHz internal clock (Si8947) • Typical input offset: ±50 μV • Typical gain error: ±0.05 • Excellent drift spe

Isolated Delta-Sigma Modulator for Current Shunt Measurement

KEY FEATURES • Low voltage differential input • ±62.5 mV and ±250 mV options • Modulator clock options • External clock up to 25 MHz (Si8941) • 10 MHz internal clock (Si8946) • 20 MHz internal clock (Si8947) • Typical input offset: ±50 μV • Typical gain error: ±0.05 • Excellent drift spe

Isolated Delta-Sigma Modulator

Si8947AB-IS devices are galvanically isolated delta-sigma modulators. The low voltage, differential input has a ±62.5 mV specified input range which allows for reduced power loss vs. industry standard 250 mV input when measuring voltage across a current shunt resistor or for any place where a sensor

Isolated Delta-Sigma Modulator for Current Shunt Measurement

KEY FEATURES • Low voltage differential input • ±62.5 mV and ±250 mV options • Modulator clock options • External clock up to 25 MHz (Si8941) • 10 MHz internal clock (Si8946) • 20 MHz internal clock (Si8947) • Typical input offset: ±50 μV • Typical gain error: ±0.05 • Excellent drift spe

Automotive Isolated Delta-Sigma Modulator

Si8947AD-AS4 devices are galvanically isolated delta-sigma modulators. The low voltage, differential input has a ±62.5 mV specified input range which allows for reduced power loss vs. industry standard 250 mV input when measuring voltage across a current shunt resistor or for any place where a senso

Isolated Delta-Sigma Modulator

Si8947AD-IS4 devices are galvanically isolated delta-sigma modulators. The low voltage, differential input has a ±62.5 mV specified input range which allows for reduced power loss vs. industry standard 250 mV input when measuring voltage across a current shunt resistor or for any place where a senso

Isolated Delta-Sigma Modulator for Current Shunt Measurement

KEY FEATURES • Low voltage differential input • ±62.5 mV and ±250 mV options • Modulator clock options • External clock up to 25 MHz (Si8941) • 10 MHz internal clock (Si8946) • 20 MHz internal clock (Si8947) • Typical input offset: ±50 μV • Typical gain error: ±0.05 • Excellent drift spe

Isolated Delta-Sigma Modulator for Current Shunt Measurement

KEY FEATURES • Low voltage differential input • ±62.5 mV and ±250 mV options • Modulator clock options • External clock up to 25 MHz (Si8941) • 10 MHz internal clock (Si8946) • 20 MHz internal clock (Si8947) • Typical input offset: ±50 μV • Typical gain error: ±0.05 • Excellent drift spe

Isolated Delta-Sigma Modulator for Current Shunt Measurement

KEY FEATURES • Low voltage differential input • ±62.5 mV and ±250 mV options • Modulator clock options • External clock up to 25 MHz (Si8941) • 10 MHz internal clock (Si8946) • 20 MHz internal clock (Si8947) • Typical input offset: ±50 μV • Typical gain error: ±0.05 • Excellent drift spe

Isolated Delta-Sigma Modulator for Current Shunt Measurement

KEY FEATURES • Low voltage differential input • ±62.5 mV and ±250 mV options • Modulator clock options • External clock up to 25 MHz (Si8941) • 10 MHz internal clock (Si8946) • 20 MHz internal clock (Si8947) • Typical input offset: ±50 μV • Typical gain error: ±0.05 • Excellent drift spe

Isolated Delta-Sigma Modulator for Current Shunt Measurement

KEY FEATURES • Low voltage differential input • ±62.5 mV and ±250 mV options • Modulator clock options • External clock up to 25 MHz (Si8941) • 10 MHz internal clock (Si8946) • 20 MHz internal clock (Si8947) • Typical input offset: ±50 μV • Typical gain error: ±0.05 • Excellent drift spe

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：AUTOMOTIVE ISOLATED DELTA-SIGMA 集成电路（IC） 电源管理 - 专用

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：POWER ISOLATION 集成电路（IC） 电源管理 - 专用

Dual P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -4A, RDS(ON) = 65mΩ @VGS = -10V. RDS(ON) = 100mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

50V CERAMIC DISC

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Dual P-Channel Enhancement Mode Field Effect Transistor

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4-channel audio amplifier (SE: 1 W to 25 W; BTL: 4 W to 50 W)

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