P-Channel Enhancement Mode MOSFET

GENERAL FEATURES ® Vos =30V1o =-50 Rosco 8.0mQ @Ves=-10V typ Reson 18m0 @V cs=-4 5V typ

MachFlex™, 31G C #16 Str BC, PVC-NYL Ins, OA TC Brd, TPE Jkt, TPE Jkt,1000V WTTC, 600V TC-ER

Product Description MachFlex™ for High Flex, 3+1G Conductor 16AWG (26x30) Bare Copper, PVC-NYL Insulation, Overall Tinned Copper Braid(85%) Shield, TPE Inner Jacket, TPE Outer Jacket, 1000V WTTC, 600V TC-ER

P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM7423 is available in DFN8(3.3x3.3) package. FEATURES  -20V/-95A, RDS(ON) = 3.6mΩ(max.) @ VGS =-10V RDS(ON) = 4.6mΩ(max.) @ VGS =-4.5V RDS(ON) = 7mΩ(max.) @ VGS =-2.5V RDS(ON) = 10mΩ(max.) @ VGS =-1.8V  HBM ESD protection level of 2.3kV typical  100 UIS + RG Tested

20V P-Channel MOSFET

General Description The AON7423 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. Product Summary VDS -20

OR module

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P-Channel 20-V (D-S) MOSFET

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