Dual N-Channel 40 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mmProfile APPLICATIONS • Primary Side Switch • Synchronus Rectification

Dual N-Channel 40 V (D-S) MOSFET

文件：573.36 Kbytes Page：14 Pages

Dual N-Channel 40-V (D-S) MOSFET

Dual N-Channel 40 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mmProfile APPLICATIONS • Primary Side Switch • Synchronus Rectification

Dual N-Channel 40 V (D-S) MOSFET

文件：573.36 Kbytes Page：14 Pages

Dual N-Channel 40 V (D-S) MOSFET

文件：573.36 Kbytes Page：14 Pages

High Speed, Dual Channel Power MOSFET Drivers

General Description The EL7202C/EL7212C/EL7222C ICs are matched dual-drivers ICs that improve the operation of the industry standard DS0026 clock drivers. The Elantec Versions are very high speed drivers capable of delivering peak currents of 2.0 amps into highly capacitive loads. The high speed

2-Channel 2-Position AV Switch for VCR/Audio Use

Overview The LA7222 is a 2-channel 2-position high-performance analog switch having wide application from audio band to video band.

22 dB GAIN 750/860 MHz 110/128 CHANNEL CATV AMPLIFIERS

The RF Line 110-Channel (750 MHz) and 128-Channel (860 MHz) CATV Amplifiers The MHW7222 and MHW8222 are designed specifically for up to 860 MHz CATV systems as amplifiers in trunk and line extender applications. These amplifiers feature ion–implanted, arsenic emitter transistors and an all gold

22 dB GAIN 750 MHz 110 CHANNEL CATV AMPLIFIER

The RF Line 110-Channel (750 MHz) CATV Amplifier The MHW7222A is designed specifically for up to 750 MHz CATV systems as amplifiers in trunk and line extender applications. This amplifier features ion–implanted, arsenic emitter transistors, an all gold metallization system and offers improved ru

.025 NPN Phototransistors

PRODUCT DESCRIPTION A small area high speed NPN silicon phototransistor mounted in a 3 mm diameter, lensed, end looking, plastic package. The package material transmits infrared and blocks visible light. These devices are spectrally and mechanically matched to the VTE717x series of IREDs.