N-Channel 1.8-V (G-S) MOSFET With Schottky Diode

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N-Channel 1.8-V (G-S) MOSFET With Schottky Diode

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N-Channel 1.8 V (G-S) MOSFET with Schottky Diode

N-Channel 1.8-V (G-S) MOSFET With Schottky Diode

文件：111.48 Kbytes Page：7 Pages

N-Channel 1.8-V (G-S) MOSFET With Schottky Diode

文件：111.48 Kbytes Page：7 Pages

N-Channel 1.8-V (G-S) MOSFET With Schottky Diode

文件：111.48 Kbytes Page：7 Pages

Dual N-Channel 20 V (D-S) MOSFET

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Dual N-Channel 20 V (D-S) MOSFET

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HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS

HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS • High Voltage : VCBO= 1500 V • Low Saturation Voltage : VCE (sat)= 3 V (max) • High Speed : tf(2)= 0.1 µs (typ.)

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] • 1.8V drive. [SBD] • Short reverse recovery time. • Low for

Customer Specification

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DISTRIBUTOR ASSEMBLY INSTRUCTIONS

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Step-down Switching Regulator

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