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SI4936价格
参考价格：￥2.4027
型号：SI4936ADY-T1-E3 品牌：Vishay 备注：这里有SI4936多少钱，2026年最近7天走势，今日出价，今日竞价，SI4936批发/采购报价，SI4936行情走势销售排行榜，SI4936报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SI4936 | Dual N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC | VISHAYVishay Siliconix 威世威世科技公司 |   | |
SI4936 | Dual N-Channel Enhancement Mode MOSFET 文件：241.64 Kbytes Page：3 Pages | FAIRCHILD 仙童半导体 | | |
SI4936 | Dual N-Channel Enhancement Mode MOSFET | ONSEMI 安森美半导体 | | |
Dual N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive Ordering Information: Si4936ADY-T1-E3 (Lead (Pb)-free) Si4936ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)2002/95/EC | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive Ordering Information: Si4936ADY-T1-E3 (Lead (Pb)-free) Si4936ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)2002/95/EC | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC | VISHAYVishay Siliconix 威世威世科技公司 | | ||
丝印代码：4936；‘Dual N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES | ® Roson =35 MO@VGS=10v | @ Rosin =45 m0 @VGS=4.5V | ‘@ Super high density cell design for extremely low Ros(oN) @ Exception! anesistance and maximum OC cunt | capabity | | TECHPUBLIC 台舟电子 | | ||
Dual N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Low Current DC/DC Conversion • Notebook System Power Ordering Information: Si4936BDY-T1-E3 (Lead (Pb)-free) Si4936BDY-T1-GE3 (Lead (Pb)-free | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Low Current DC/DC Conversion • Notebook System Power Ordering Information: Si4936BDY-T1-E3 (Lead (Pb)-free) Si4936BDY-T1-GE3 (Lead (Pb)-free | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual N-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® power MOSFET • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Low current DC/DC conversion • Notebook system power | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual N-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® power MOSFET • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Low current DC/DC conversion • Notebook system power | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual N-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® power MOSFET • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Low current DC/DC conversion • Notebook system power | VISHAYVishay Siliconix 威世威世科技公司 | | ||
丝印代码：4936；Dual N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES @ Ros(oN =35 mO@VGS=10V ® Ros =45 mO@VGS=4.5V ‘@ Super high density cell design for extremely low Ros(oN) ® Exceptional on-resistance and maximum DC curent | TECHPUBLIC 台舟电子 | | ||
Dual N-Channel 30-V (D-S) MOSFET 文件：1.02538 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Dual N-Channel 30-V (D-S) MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual N-Channel 30-V (D-S) MOSFET 文件：244.03 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual N-Channel 30-V (D-S) MOSFET 文件：1.0255 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Dual N-Channel 30-V (D-S) MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual N-Channel 30-V (D-S) MOSFET 文件：257.49 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual N-Channel 30-V (D-S) MOSFET 文件：254.82 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual N-Channel MOSFET uses advanced trench technology 文件：1.50408 Mbytes Page：4 Pages | DOINGTER 杜因特 | | ||
Dual N-Channel 30-V (D-S) MOSFET 文件：1.025609 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Dual N-Channel 30-V (D-S) MOSFET 文件：254.82 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual N-Channel 30-V (D-S) MOSFET 文件：49.53 Kbytes Page：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual N-Channel Enhancement Mode MOSFET 文件：241.64 Kbytes Page：3 Pages | FAIRCHILD 仙童半导体 | | ||
Dual N-Channel 30-V (D-S) MOSFET 文件：1.025609 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
ADVANCED VOLTAGE REGULATOR DESCRIPTION The L4936E is a monolithic integrated dual voltage regulator with two very low dropout outputs and additional functions as power-on reset and in put voltage sense. It is designed for supplying the microcomputer controlled systems especially in automotive applications. ■ ENABLE AND SE | STMICROELECTRONICS 意法半导体 | | ||
ADVANCED VOLTAGE REGULATOR DESCRIPTION The L4936E is a monolithic integrated dual voltage regulator with two very low dropout outputs and additional functions as power-on reset and in put voltage sense. It is designed for supplying the microcomputer controlled systems especially in automotive applications. ■ ENABLE AND SE | STMICROELECTRONICS 意法半导体 | | ||
DUAL MULTIFUNCTION VOLTAGE REGULATOR DESCRIPTION TheL4936N/NHare monolithic integrateddual voltage regulators with two very low dropout outputs and additionalfunctionssuchas power-onresetand input voltage sense. They are designed for supplying microcomputer controlled systems specially in automotive applications. ■ STANDBY OUTPUT V | STMICROELECTRONICS 意法半导体 | | ||
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER(VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere) FEATURES ● High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ● 1.0 ampere operation at TA=55 ¢J with no thermal runaway ● Fast switching for high efficiency ● Exceeds environ | PANJIT 強茂 | | ||
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER VOLTAGE - 500 to 600 Volts CURRENT - 1.0 Amperes | TRSYS Transys Electronics | |
SI4936产品属性
- 类型
描述
- 型号
SI4936
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
Dual N-Channel Enhancement Mode MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
SOP-8 |
39662 |
VISHAY/威世全新特价Si4936DY-T1-E3即刻询购立享优惠#长期有货 |
|||
VISHAY |
24+ |
SOP8 |
7850 |
只做原装正品现货或订货假一赔十! |
|||
135 |
8 |
VISHAY/威世 |
3 |
92 |
|||
VISHAY/威世 |
26+ |
SOP-8 |
18000 |
原装正品,可配单,支持实单 |
|||
VISHAY/威世 |
2025+ |
SOP-8 |
5000 |
原装进口,免费送样品! |
|||
FAIRCHILD |
04+ |
SOP8 |
1900 |
全新原装绝对自己公司现货 |
|||
VISHAY |
26+ |
SOIC-8 |
9200 |
绝对原装现货,价格低,欢迎询购! |
|||
SILI |
19+ |
SOP8 |
10144 |
||||
VISHAY(威世) |
SOIC-8 |
4262 |
全新原装正品现货可开票 |
||||
VISHAY |
24+ |
SOP8 |
9800 |
一级代理/全新原装现货/长期供应! |
SI4936规格书下载地址
SI4936参数引脚图相关
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DdatasheetPDF页码索引
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