位置：首页 > IC中文资料第1088页 > SI4800DY
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SI4800DY | N-Channel Reducded Qg, Fast Switching MOSFET 文件：56.32 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 |   | |
Si4800DY | N-Channel 30-V (D-S) MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
N-Channel 20V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch | VBSEMI 微碧半导体 | | ||
丝印代码：4800；N-channel enhancement mode field-effect transistor N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1. Low gate charge 2. Surface mounted package 3. Low on-state resistance 4. Fast switching. | PHILIPS 飞利浦 | | ||
3 V Stereo Headphone Power Amplifier Overview The LA4800V is a headphone stereo power amplifier IC that features a high signal-to-noise ratio, high ripple rejection, low distortion and low current consumption, making it ideal for portable CD players. Features • 96 dB (typ) high S/N ratio at 7 µV • 76 dB (typ) high ripple rejectio | SANYO 三洋 | | ||
3 V Stereo Headphone Power Amplifier Overview The LA4800V is a headphone stereo power amplifier IC that features a high signal-to-noise ratio, high ripple rejection, low distortion and low current consumption, making it ideal for portable CD players. Features • 96 dB (typ) high S/N ratio at 7 µV • 76 dB (typ) high ripple rejectio | SANYO 三洋 | | ||
Thin Type Phototransistor ■ Features 1. Thin type package (Thickness : 1.5mm ) 2. Visible light cut-off type : PT4800F/PT4810F/PT4850F 3. Single phototransistor output : PT4800/PT4800F/PT4850F Darlington phototransistor output: PT4810/PT4810F 4. Thin type ■ Applications 1. VCRs 2. Floppy disk drives | SHARPSharp Corporation 夏普 | | ||
Vertical deflection circuit for monitor applications 文件：90.95 Kbytes Page：16 Pages | PHILIPS 飞利浦 | |
SI4800DY产品属性
- 类型
描述
- 型号
SI4800DY
- 功能描述
MOSFET 30V 9A 2.5W
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SI |
2023+ |
SMD |
3973 |
原厂全新正品旗舰店优势现货 |
|||
VISHAY |
23+ |
SOP8 |
20000 |
全新原装假一赔十 |
|||
VISHAY/威世 |
2450+ |
SOP-8 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
VISHAY |
23+ |
SOP |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
VISHAY/威世 |
新年份 |
SOP-8 |
33288 |
原装正品现货,实单带TP来谈! |
|||
VISHAY |
23+ |
SOP8 |
6000 |
原装正品假一罚百!可开增票! |
|||
VISHAY |
23+ |
SOP8 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
VISHAY |
24+ |
SOP |
6232 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
VISHAY |
2024+ |
SOP8 |
50000 |
原装现货 |
|||
VISHAY |
08+ |
SOP8 |
3300 |
全新原装现货绝对自己公司特价库 |
SI4800DY规格书下载地址
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SI4800DY数据表相关新闻
SI4704-D60-GMR SI4730-D60-GUR SI4704-D60-GMR SI8641ED-B-ISR SI4705-D60-GMR SI4703-C19-GMR MCIMX6Y2CVM05AB MCIMX6U5EVM10AC LPC11E68JBD64E S9KEAZ128AMLK TJA1044GT/3实单必成
SI4704-D60-GMR SI4730-D60-GUR SI4704-D60-GMRSI8641ED-B-ISR SI4705-D60-GMR SI4703-C19-GMR MCIMX6Y2CVM05AB MCIMX6U5EVM10ACLPC11E68JBD64E S9KEAZ128AMLK TJA1044GT/3实单必成
2021-7-29SI4755-A40-GMR
RF Receiver 射频接收器 , AM/FM Radio Receiver 射频接收器 , 1227.6 MHz, 1575.42 MHz 射频接收器 , 315 MHz or 433 MHz Superheterodyne Receiver 射频接收器 , 47 MHz to 1.218 GHz 射频接收器 , 4.092 MHz to 1575.42 MHz, 8.57 MHz to 1601.718 MHz, 10.23 MHz to 156
2020-9-4SI4802DY-T1-E3
SOT-23-3 P-Channel 30 V MOSFET , N-Channel 140 A 200 V MOSFET , SOT-23-3 MOSFET , 1 Channel N-Channel 75 A 100 V MOSFET , P-Channel 60 A MOSFET , N-Channel 3 A MOSFET
2020-8-26SI4812BDY-T1-E3公司全新原装现货
瀚佳科技（深圳）有限公司 专业进口电子元器件代理商
2019-9-12SI4804BDY-T1-E3公司全新原装现货
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2019-9-12SI4684DY-T1-E3深圳市睿智芯电子有限公司，只做原装正品。
制造商: Vishay 产品种类: MOSFET RoHS: 详细信息 技术: Si 安装风格: SMD/SMT 封装 / 箱体: SO-8 商标名: TrenchFET 封装: Cut Tape 封装: Reel 高度: 1.75 mm 长度: 4.9 mm 系列: SI4 宽度: 3.9 mm 商标: Vishay / Siliconix CNHTS: 8541210000 HTS代码: 8541210095 MXHTS: 854
2019-3-19
DdatasheetPDF页码索引
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