P-Channel 1.25-W, 1.8-V (G-S) MOSFET

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P-Channel 1.25-W, 1.8-V (G-S) MOSFET

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

P-Channel 1.25-W, 1.8-V (G-S) MOSFET

文件：58.98 Kbytes Page：4 Pages

Silicon NPN Transistor Fast Switching Power Darlington

Description: The NTE2315 is a silicon epitaxial planer NPN power Darlington transistor in a TO220 type package with an integrated base–emitter speed–up diode designed for use in high voltage, high current, fast switching applications. In particular, the NTE2315 can be used in horizontal output

2-Channel Audio Processor IC?

Description PT2315 is a two-channel digital audio processor utilizing CMOS Technology. Volume, Bass, Treble and Balance Controls are incorporated into a single chip. Loudness Function is also provided to build a highly effective electronic audio processor having the highest performance and reli

2-Channel Audio Processor IC?

Description PT2315 is a two-channel digital audio processor utilizing CMOS Technology. Volume, Bass, Treble and Balance Controls are incorporated into a single chip. Loudness Function is also provided to build a highly effective electronic audio processor having the highest performance and reli

Frequency Synthesizer for RF Personal Communications

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Frequency Synthesizer for RF Personal Communications

文件：409.41 Kbytes Page：22 Pages