20 V N-Channel Enhancement Mode MOSFET

Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications

N-Channel MOSFET

FEATURES • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Fully Characterized Avalanche Voltage and Current • Improved Shoot-Through FOM

N-Channel Enhancement Mode Field Effect Transistor

Features VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A

N-Channel Enhancement Mode MOSFET

Feature ● 20V/6A, RDS(ON) = 35mΩ(MAX) @VGS = 4.5V. RDS(ON) = 45mΩ(MAX) @VGS = 2.5V. ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● SC-59 for Surface Mount Package. Applications ● LI-ION Protection Circuit

N-Channel Enhancement Mode Field Effect Transistor

Features VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A

N-Channel 20-V(D-S) MOSFET

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

N-Channel 20-V(D-S) MOSFET

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

30V N-Channel MOSFET

Application « DC/DC Converter « Portable equipment and battery Load Switch

30V N-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology Si2300DS General Features VDS = 30V ID =4.2A RDS(ON)

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter for Portable Devices • Load Switch

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter for Portable Devices • Load Switch

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter for Portable Devices • Load Switch

N-Channel MOSFET

Features ●VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A ●VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A ●VDS=20V,RDS(ON)=75m @VGS=1.8V,ID=1.0A ●Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

N-Channel Enhancement MOSFET

文件：751.69 Kbytes Page：2 Pages

N-Channel 20 V (D-S) MOSFET

文件：1.0482 Mbytes Page：9 Pages

N-Channel 30 V (D-S) MOSFET

文件：206.74 Kbytes Page：9 Pages

N-Channel 30-V (D-S) MOSFET

文件：240.95 Kbytes Page：10 Pages

N-Channel 30 V (D-S) MOSFET

文件：206.74 Kbytes Page：9 Pages

N-Channel 30 V (D-S) MOSFET

文件：206.74 Kbytes Page：9 Pages

N-Channel 20 V (D-S) MOSFET

文件：1.048099 Mbytes Page：9 Pages

N-Channel MOSFET

文件：761.1 Kbytes Page：2 Pages

Bobbin Wound Surface Mount Inductors

DESCRIPTION The 2300 series is a range of bobbin wound surface mount inductors designed for use in switching power supply and power line filter circuits. The parts are suitable for any application requiring a high saturation current in a miniature surface mount footprint. Where EMI is a critical

1/4 JACK BLOCKS

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6.0A竊?0V N-CHANNEL MOSFET

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2300 SERIES MULTI-POLE REED RELAYS

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