Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • ESD Protected: 2000 V • Thermally Enhanced SC-70 Package • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching • PA Switch • Level Switch

Dual N-Channel 20 V (D-S) MOSFET

丝印代码：CA**；Dual N-Channel 20-V (D-S) MOSFET

文件：71.43 Kbytes Page：6 Pages

丝印代码：CA**；Dual N-Channel 20-V (D-S) MOSFET

文件：42.26 Kbytes Page：5 Pages

Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • ESD Protected: 2000 V • Thermally Enhanced SC-70 Package • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching • PA Switch • Level Switch

Dual N-Channel 20-V (D-S) MOSFET

文件：71.43 Kbytes Page：6 Pages

Integrated Circuit Positive 3 Terminal Voltage Regulator, 12V, 3A

Description: The NTE1912 is a 3 terminal fixed positive voltage regulator in a TO3 type package designed for use in applications requiring a well regulated positive output voltage. Outstanding features include full power usage up to 3A of load current, internal current limiting, thermal shutdow

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1912 is a switching device which can be driven directly by a 2.5-V power source. The µPA1912 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1912 is a switching device which can be driven directly by a 2.5-V power source. The µPA1912 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

1.5x/2x High-Efficiency White LED Charge Pumps

文件：788.15 Kbytes Page：11 Pages

32-Bit Single-Chip Microcontroller

文件：2.8013 Mbytes Page：68 Pages