N- and P-Channel 1.8 V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Thermally Enhanced SC-70 Package • Fast Switching to Minimize Gate and Switching Losses • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Baseband dc-to-dc Converter Switch for Portable El

N- and P-Channel 1.8-V (G-S) MOSFET

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N- and P-Channel 1.8 V (G-S) MOSFET

N- and P-Channel 1.8 V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Thermally Enhanced SC-70 Package • Fast Switching to Minimize Gate and Switching Losses • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Baseband dc-to-dc Converter Switch for Portable El

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 16 (26/30) AWG Tinned Copper 0.060 b) Insulation 0.016 Wall, Nom. PVC 0.092+/- 0.002 (1) Color(s) WHITE, BLACK, RED, GREEN, YELLOW, BLUE, BROWN ORANGE, SLATE, VIOLET, WHITE/BLACK, WHITE/RED WHITE/GREEN, WHITE/YELLOW, WHITE/BLUE WHIT

N-Channel Enhancement Mode Field Effect Transistor

Description The ACE1557B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. Features ● 30V/5A =-30V ● RDS(ON)=29mΩ @ VGS=10V ● RDS(ON)=41mΩ @ VGS=4.5V

Drywall Punch

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Customer Specification

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Screw to Tab Terminal Blocks

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