Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 1.8 V Rated • Very Small Footprint • High-Side Switching • Low On-Resistance: 0.7  • Low Threshold: 0.8 V (typ.) • Fast Switching Speed: 10 ns • 1.8 V Operation • Gate-Source ESD Protected: 2000 V

Dual N-Channel 20 V (D-S) MOSFET

Dual N-Channel 20-V (D-S) MOSFET

文件：49.87 Kbytes Page：4 Pages

Dual N-Channel 20-V (D-S) MOSFET

文件：113.93 Kbytes Page：5 Pages

Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 1.8 V Rated • Very Small Footprint • High-Side Switching • Low On-Resistance: 0.7  • Low Threshold: 0.8 V (typ.) • Fast Switching Speed: 10 ns • 1.8 V Operation • Gate-Source ESD Protected: 2000 V

Dual N-Channel 20-V (D-S) MOSFET

文件：113.93 Kbytes Page：5 Pages

Dual N-Channel 20-V (D-S) MOSFET

文件：113.93 Kbytes Page：5 Pages

Dual N-Channel 20-V (D-S) MOSFET

文件：113.93 Kbytes Page：5 Pages

In-System Programmable High Density PLD

Description The ispLSI 1024/883 is a High-Density Programmable Logic Device processed in full compliance to MIL-STD-883. This military grade device contains 144 Registers, 48 Universal I/O pins, six Dedicated Input pins, four Dedicated Clock Input pins and a Global Routing Pool (GRP). Featu

Pulse Transformers

RoHS compliant UL 94V-0 package material Isolation to 4kVrms Compact footprint PCB mounting Backward compatible with Sn/Pb soldering systems

In-System Programmable High Density PLD

Description The ispLSI 1024EA is a High Density Programmable Logic Device containing 144 Registers, 48 Universal I/O pins, two Dedicated Input pins, four Dedicated Clock Input pins and a Global Routing Pool (GRP). Features • HIGH DENSITY PROGRAMMABLE LOGIC — 4000 PLD Gates — 48 I/O

Pulse Transformers

文件：109.19 Kbytes Page：2 Pages

SM BATTERY HOLDER AA, ON TAPE

文件：96.76 Kbytes Page：1 Pages