WIRELESS PRODUCT SELECTOR GUIDE

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Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240-960 MHz EZRadioPRO Transceiver

文件：2.48695 Mbytes Page：384 Pages

P-Channel 1.8 V (G-S) MOSFET

• Halogen-free According to IEC 61249-2-21 Definition • High-Side Switching • Low On-Resistance: 1.2 Ω • Low Threshold: 0.8 V (Typ.) • Fast Switching Speed: 14 ns • 1.8 V Operation • TrenchFET® Power MOSFETs • 2000 V ESD Protection • Compliant to RoHS Directive 2002/95/EC

P-Channel Enhancement Mode MOSFET

Features © Vos =-20VJo=-08A Roson

Programmable packet handler

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Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240-960 MHz EZRadioPRO Transceiver

文件：2.48695 Mbytes Page：384 Pages

封装/外壳：42-WFQFN 裸露焊盘 包装：管件 描述：IC RF TXRX+MCU ISM\u003c1GHZ 42WFQFN RF/IF，射频/中频和 RFID 射频收发器 IC

射频微控制器 - MCU 8kB, 768B RAM, +13 dBm, programmable XCVR

封装/外壳：42-VFLGA 裸露焊盘 包装：管件 描述：IC RF TXRX+MCU ISM\u003c1GHZ 42VFLGA RF/IF，射频/中频和 RFID 射频收发器 IC

射频微控制器 - MCU 8kB, 768B RAM, +13 dBm, programmable XCVR

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET

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P-Channel 20 V (D-S) MOSFET

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P-Channel 20 V (D-S) MOSFET

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P-Channel 1.8 V (G-S) MOSFET

文件：158.6 Kbytes Page：8 Pages

P-Channel 1.8-V (G-S) MOSFET

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P-Channel 1.8-V (G-S) MOSFET

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P-Channel 1.8 V (G-S) MOSFET

文件：156.96 Kbytes Page：8 Pages

P-Channel 1.8-V (G-S) MOSFET

文件：94.34 Kbytes Page：6 Pages

P-Channel 1.8 V (G-S) MOSFET

文件：158.6 Kbytes Page：8 Pages

P-Channel 1.8 V (G-S) MOSFET

文件：156.96 Kbytes Page：8 Pages

P-Channel 1.8-V (G-S) MOSFET

文件：94.34 Kbytes Page：6 Pages

P-Channel 1.8 V (G-S) MOSFET

文件：158.6 Kbytes Page：8 Pages

P-Channel 1.8-V (G-S) MOSFET

文件：94.34 Kbytes Page：6 Pages

P-Channel 1.8 V (G-S) MOSFET

文件：158.6 Kbytes Page：8 Pages

P-Channel 1.8-V (G-S) MOSFET

文件：94.34 Kbytes Page：6 Pages

P-Channel 1.8-V (G-S) MOSFET

文件：44.53 Kbytes Page：5 Pages

P-Channel 1.8-V (G-S) MOSFET

文件：94.34 Kbytes Page：6 Pages

P-Channel 1.8 V (G-S) MOSFET

文件：158.6 Kbytes Page：8 Pages

P-Channel 1.8-V (G-S) MOSFET

文件：94.34 Kbytes Page：6 Pages

FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

N-channel enhancement mode MOS transistor

DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ‘trench’ technology, in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • Very low on-state resistance. APPLICATIONS • DC to DC converters • General purpose switching applications.

VTB Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.

GaAs Infrared Emitting Diodes

DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.