SI1012价格
参考价格:¥28.8915
型号:SI1012-C-GM2 品牌:Silicon Laboratories 备注:这里有SI1012多少钱,2026年最近7天走势,今日出价,今日竞价,SI1012批发/采购报价,SI1012行情走势销售排行榜,SI1012报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SI1012 | Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240-960 MHz EZRadioPRO Transceiver 文件:2.48695 Mbytes Page:384 Pages | SILABS 芯科科技 | ||
SI1012 | WIRELESS PRODUCT SELECTOR GUIDE 文件:1.72393 Mbytes Page:12 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
SI1012 | N-Channel Plastic-Encapsulate Transistor 文件:505.98 Kbytes Page:4 Pages | MCC | ||
SI1012 | MOSFETS | MCC | ||
N-Channel Enhancement Mode MOSFET Features * Vos=20Vb=08A | Roson=250m0 @ Vos45V (yp) Roson = 300mO@ Ves=2.5V (typ) + ESD Protection | TECHPUBLIC 台舟电子 | |||
N-Channel Enhancement Mode MOSFET Features © Vos=20Vb=08A Roson=250mQ @ Vos=4.5V (typ) Roson = 300m0@ Ves=2.5V (typ) * ESD Protection | TECHPUBLIC 台舟电子 | |||
Programmable packet handler 文件:986.14 Kbytes Page:2 Pages | SILABS 芯科科技 | |||
Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240-960 MHz EZRadioPRO Transceiver 文件:2.48695 Mbytes Page:384 Pages | SILABS 芯科科技 | |||
封装/外壳:42-WFQFN 裸露焊盘 包装:管件 描述:IC RF TXRX+MCU ISM\u003c1GHZ 42WFQFN RF/IF,射频/中频和 RFID 射频收发器 IC | SILICONLABS 芯科 | |||
封装/外壳:42-VFLGA 裸露焊盘 包装:管件 描述:IC RF TXRX+MCU ISM\u003c1GHZ 42VFLGA RF/IF,射频/中频和 RFID 射频收发器 IC | SILICONLABS 芯科 | |||
射频微控制器 - MCU 16kB, 768B RAM, +13 dBm, programmable XCVR | TELEGESIS | |||
射频微控制器 - MCU 16kB, 768B RAM, +13 dBm, programmable XCVR | TELEGESIS | |||
N-Channel 20 V (D-S) MOSFET 文件:173.75 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 20 V (D-S) MOSFET 文件:157.17 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 20 V (D-S) MOSFET 文件:176.54 Kbytes Page:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 20 V (D-S) MOSFET 文件:173.75 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8 V (G-S) MOSFET 文件:170.36 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8 V (G-S) MOSFET 文件:172 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8 V (G-S) MOSFET 文件:235.28 Kbytes Page:11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8 V (G-S) MOSFET 文件:204.62 Kbytes Page:10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8-V (G-S) MOSFET 文件:94.59 Kbytes Page:6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8-V (G-S) MOSFET 文件:50.57 Kbytes Page:5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8-V (G-S) MOSFET 文件:108.39 Kbytes Page:6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Medium Integrated Power Solution Using a Dual DC/DC Converter and an LDO 文件:380.22 Kbytes Page:8 Pages | TI 德州仪器 | |||
N-Channel 1.8-V (G-S) MOSFET 文件:94.59 Kbytes Page:6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8-V (G-S) MOSFET 文件:108.39 Kbytes Page:6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8 V (G-S) MOSFET 文件:204.62 Kbytes Page:10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8 V (G-S) MOSFET 文件:172 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8 V (G-S) MOSFET 文件:170.36 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Medium Integrated Power Solution Using a Dual DC/DC Converter and an LDO 文件:380.22 Kbytes Page:8 Pages | TI 德州仪器 | |||
N-Channel 1.8-V (G-S) MOSFET 文件:108.39 Kbytes Page:6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8 V (G-S) MOSFET 文件:204.62 Kbytes Page:10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
丝印代码:C;N-Channel 1.8 V (G-S) MOSFET 文件:172 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8-V (G-S) MOSFET 文件:108.39 Kbytes Page:6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
丝印代码:C;N-Channel 1.8 V (G-S) MOSFET 文件:170.36 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8 V (G-S) MOSFET 文件:170.36 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8-V (G-S) MOSFET 文件:50.57 Kbytes Page:5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8-V (G-S) MOSFET 文件:94.59 Kbytes Page:6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8-V (G-S) MOSFET 文件:108.39 Kbytes Page:6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8 V (G-S) MOSFET 文件:172 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8 V (G-S) MOSFET 文件:235.28 Kbytes Page:11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8 V (G-S) MOSFET 文件:204.62 Kbytes Page:10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8 V (G-S) MOSFET 文件:235.28 Kbytes Page:11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8-V (G-S) MOSFET 文件:108.39 Kbytes Page:6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8-V (G-S) MOSFET 文件:108.39 Kbytes Page:6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8 V (G-S) MOSFET 文件:172 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8 V (G-S) MOSFET 文件:204.62 Kbytes Page:10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 1.8 V (G-S) MOSFET 文件:170.36 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
120W STEP-DOWN SWITCHING REGULATOR DESCRIPTION The GS-R1012 is a step-down switching voltage regulator suitable to provide 12V/10A output voltage from a wide input voltage range (18 to 36V). FEATURES ■ Wide input voltage range (18 to 36V) ■ High efficiency (90 min.) ■ Parallel operation with current sharing ■ Synchronization | STMICROELECTRONICS 意法半导体 | |||
FOR OPTICAL INFORMATION SYSTEMS DESCRIPTION ML1XX2 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 30mW. ML1XX2 has a window-mirror-facet which improves the maximum output power. That leads to highly relia | MITSUBISHI 三菱电机 | |||
VTB Process Photodiodes PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response. | PERKINELMER | |||
VTP Process Photodiodes PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window TO-46 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response. | PERKINELMER | |||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 文件:38.35 Kbytes Page:2 Pages | POLYFET |
SI1012产品属性
- 类型
描述
- Polarity:
N-Channel
- Drain-Source Voltage VDS (V):
20
- Gate-Source Voltage VGS(V):
±12
- Drain Current IDMAX (A):
1.0
- Drain-Source On Resistance MAX(Ω):
0.7
- Input Capacitance CISSMAX (pF):
100
- Gate Threshold Voltage VGS(th)-Min:
0.45
- Gate Threshold Voltage VGS(th)-Max:
1.2
- Package Qty:
Tape
- FIT:
30; Tj=100℃
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay(威世) |
26+ |
SC-75A |
10548 |
原厂订货渠道,支持账期,一站式服务! |
|||
VISHAY/威世 |
23+ |
SC75A |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
VISHAY/威世 |
25+ |
SC-89-3 |
47609 |
VISHAY/威世全新特价SI1012X-T1-GE3即刻询购立享优惠#长期有货 |
|||
VISHAY |
2428+ |
SOT |
8500 |
只做原装正品现货或订货假一赔十! |
|||
VISHAY/威世 |
23+ |
SC-75 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
VISHAY |
24+ |
SOT-523 |
9860 |
全新原装现货/假一罚百! |
|||
SILICONLABS |
23+ |
NA |
28520 |
原装进口ICMCUSOCMOS等知名国内外品牌只做原装全 |
|||
VISHAY(威世) |
23+ |
N/A |
23500 |
最新到货,只做原装进口 |
|||
VISHAY |
16+ |
SC89-3 |
9500 |
进口原装现货/价格优势! |
|||
VISHAY |
22+ |
SOT-523 |
8000 |
原装正品现货假一罚十 |
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SI1012规格书下载地址
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