50-250 mA 1500-14000 VOLTS 150-200 nsec HIGH VOLTAGE RECTIFIER

FEATURES: • Fast Recovery: 150-200 nsec Maximum • PIV to 14000 Volts • Hermetically Sealed Axial Lead Package • Void-Free Construction • Metallurgically Bonded • 175°C Maximum Operating Temperature • Also Available in Standard and Ultra Fast Recovery Versions. Contact Factory. • TX, TXV, a

0.05 A, 14 kV Fast Recovery High Voltage Rectifier

• Fast Recovery: 150 – 200 nsec Maximum\n• Hermetically Sealed\n• Metallurgically Bonded\n• Also Available in Standard and Ultrafast Recovery Versions – Contact Factory\n• Limited Availability – Replacement Data Sheet: RC0196;

FAST RECOVERY HIGH VOLTAGE RECTIFIER

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Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

POWER TRANSISTORS(10A,60-100V,125W)

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP